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Article: Improved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation

TitleImproved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation
Authors
Keywords1/f noise
Dielectric
HfLaO
high-κ
organic transistor
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions On Device And Materials Reliability, 2012, v. 12 n. 2, p. 520-528 How to Cite?
AbstractPentacene organic thin-film transistors (OTFTs) with fluorinated high-κ HfLaO as gate insulator were fabricated. The dielectrics were prepared by sputtering method and then annealed in N 2 or NH 3 at 400 °C. Subsequently, the dielectrics were treated by fluorine plasma for different durations (100, 300, and 900 s). The N 2 and NH 3-annealed OTFTs with a 100-s plasma treatment achieve a carrier mobility of 0.62 and 0.66 cm 2V̇s, respectively, which are higher than those of the OTFTs without plasma treatment (0.22 and 0.41 cm 2V̇s). Moreover, the plasma-treated OTFTs realize better 1/f noise characteristics than those without plasma treatment. The improved performance is due to passivation of the dielectric surface by plasma-induced fluorine incorporation. However, for longer time (300 and 900 s) of plasma treatment, the performance of the OTFTs deteriorates in terms of carrier mobility and 1/f noise characteristics due to increased plasma-induced damage of the dielectric surface. The morphology of the pentacene film grown on the HfLaO gate insulator was characterized by SEM. It reveals that the pentacene film has larger grain size and smoother surface on the HfLaO dielectric (for both annealing gases) with 100-s plasma treatment than the others (0, 300, and 900 s). Finally, AFM characterization of the HfLaO film also confirms the damaging effect of excessive plasma treatment on the dielectric. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155767
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 7133/07E
URC
University of Hong Kong (Nanotechnology Research Institute)00600009
Funding Information:

Manuscript received February 3, 2012; revised March 17, 2012; accepted March 21, 2012. Date of publication April 16, 2012; date of current version June 6, 2012. This work was supported in part by the RGC of HKSAR, China (Project No. HKU 7133/07E); by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials; and by the University Development Fund (Nanotechnology Research Institute, 00600009) of The University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorLiu, YRen_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorChe, CMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-08-08T08:35:14Z-
dc.date.available2012-08-08T08:35:14Z-
dc.date.issued2012en_HK
dc.identifier.citationIEEE Transactions On Device And Materials Reliability, 2012, v. 12 n. 2, p. 520-528en_HK
dc.identifier.issn1530-4388en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155767-
dc.description.abstractPentacene organic thin-film transistors (OTFTs) with fluorinated high-κ HfLaO as gate insulator were fabricated. The dielectrics were prepared by sputtering method and then annealed in N 2 or NH 3 at 400 °C. Subsequently, the dielectrics were treated by fluorine plasma for different durations (100, 300, and 900 s). The N 2 and NH 3-annealed OTFTs with a 100-s plasma treatment achieve a carrier mobility of 0.62 and 0.66 cm 2V̇s, respectively, which are higher than those of the OTFTs without plasma treatment (0.22 and 0.41 cm 2V̇s). Moreover, the plasma-treated OTFTs realize better 1/f noise characteristics than those without plasma treatment. The improved performance is due to passivation of the dielectric surface by plasma-induced fluorine incorporation. However, for longer time (300 and 900 s) of plasma treatment, the performance of the OTFTs deteriorates in terms of carrier mobility and 1/f noise characteristics due to increased plasma-induced damage of the dielectric surface. The morphology of the pentacene film grown on the HfLaO gate insulator was characterized by SEM. It reveals that the pentacene film has larger grain size and smoother surface on the HfLaO dielectric (for both annealing gases) with 100-s plasma treatment than the others (0, 300, and 900 s). Finally, AFM characterization of the HfLaO film also confirms the damaging effect of excessive plasma treatment on the dielectric. © 2012 IEEE.en_HK
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_HK
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject1/f noiseen_HK
dc.subjectDielectricen_HK
dc.subjectHfLaOen_HK
dc.subjecthigh-κen_HK
dc.subjectorganic transistoren_HK
dc.titleImproved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridationen_HK
dc.typeArticleen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2012.2194740en_HK
dc.identifier.scopuseid_2-s2.0-84862015450en_HK
dc.identifier.hkuros225756-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862015450&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue2en_HK
dc.identifier.spage520en_HK
dc.identifier.epage528en_HK
dc.identifier.isiWOS:000305085100043-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridLiu, YR=9239904900en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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