Article: Interface states in polymer thin-film transistors based on poly(3-hexylthiophene)
| Title | Interface states in polymer thin-film transistors based on poly(3-hexylthiophene) |
|---|---|
| Authors | Liu, Y2 Lai, PT1 Yao, R2 Deng, L1 |
| Issue Date | 2012 |
| Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
| Citation | Semiconductor Science And Technology, 2012, v. 27 n. 5 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/27/5/055015 |
| Abstract | Metalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd. |
| ISSN | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 |
| DOI | http://dx.doi.org/10.1088/0268-1242/27/5/055015 |
| ISI Accession Number ID | WOS:000303758900016 |
| References | References in Scopus |
| dc.contributor.author | Liu, Y |
|---|---|
| dc.contributor.author | Lai, PT |
| dc.contributor.author | Yao, R |
| dc.contributor.author | Deng, L |
| dc.date.accessioned | 2012-08-08T08:35:10Z |
| dc.date.available | 2012-08-08T08:35:10Z |
| dc.date.issued | 2012 |
| dc.description.abstract | Metalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd. |
| dc.description.nature | Link_to_subscribed_fulltext |
| dc.identifier.citation | Semiconductor Science And Technology, 2012, v. 27 n. 5 [How to Cite?] DOI: http://dx.doi.org/10.1088/0268-1242/27/5/055015 |
| dc.identifier.doi | http://dx.doi.org/10.1088/0268-1242/27/5/055015 |
| dc.identifier.isi | WOS:000303758900016 |
| dc.identifier.issn | 0268-1242 2011 Impact Factor: 1.723 2011 SCImago Journal Rankings: 0.118 |
| dc.identifier.issue | 5 |
| dc.identifier.scopus | eid_2-s2.0-84860289339 |
| dc.identifier.uri | http://hdl.handle.net/10722/155752 |
| dc.identifier.volume | 27 |
| dc.language | eng |
| dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
| dc.publisher.place | United Kingdom |
| dc.relation.ispartof | Semiconductor Science and Technology |
| dc.relation.references | References in Scopus |
| dc.title | Interface states in polymer thin-film transistors based on poly(3-hexylthiophene) |
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- South China University of Technology