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Article: Interface states in polymer thin-film transistors based on poly(3-hexylthiophene)
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TitleInterface states in polymer thin-film transistors based on poly(3-hexylthiophene)
 
AuthorsLiu, Y2
Lai, PT1
Yao, R2
Deng, L1
 
Issue Date2012
 
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
CitationSemiconductor Science And Technology, 2012, v. 27 n. 5, article no. 055015 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/27/5/055015
 
AbstractMetalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd.
 
ISSN0268-1242
2012 Impact Factor: 1.921
2012 SCImago Journal Rankings: 0.812
 
DOIhttp://dx.doi.org/10.1088/0268-1242/27/5/055015
 
ISI Accession Number IDWOS:000303758900016
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLiu, Y
 
dc.contributor.authorLai, PT
 
dc.contributor.authorYao, R
 
dc.contributor.authorDeng, L
 
dc.date.accessioned2012-08-08T08:35:10Z
 
dc.date.available2012-08-08T08:35:10Z
 
dc.date.issued2012
 
dc.description.abstractMetalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationSemiconductor Science And Technology, 2012, v. 27 n. 5, article no. 055015 [How to Cite?]
DOI: http://dx.doi.org/10.1088/0268-1242/27/5/055015
 
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/27/5/055015
 
dc.identifier.hkuros225754
 
dc.identifier.isiWOS:000303758900016
 
dc.identifier.issn0268-1242
2012 Impact Factor: 1.921
2012 SCImago Journal Rankings: 0.812
 
dc.identifier.issue5
 
dc.identifier.scopuseid_2-s2.0-84860289339
 
dc.identifier.urihttp://hdl.handle.net/10722/155752
 
dc.identifier.volume27
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofSemiconductor Science and Technology
 
dc.relation.referencesReferences in Scopus
 
dc.titleInterface states in polymer thin-film transistors based on poly(3-hexylthiophene)
 
dc.typeArticle
 
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<contributor.author>Yao, R</contributor.author>
<contributor.author>Deng, L</contributor.author>
<date.accessioned>2012-08-08T08:35:10Z</date.accessioned>
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<description.abstract>Metalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 &#215; 10 11 cm ?2 eV ?1 and 6.3 &#215; 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. &#169; 2012 IOP Publishing Ltd.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. South China University of Technology