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Article: Interface states in polymer thin-film transistors based on poly(3-hexylthiophene)

TitleInterface states in polymer thin-film transistors based on poly(3-hexylthiophene)
Authors
Issue Date2012
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2012, v. 27 n. 5, article no. 055015 How to Cite?
Abstract
Metalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155752
ISSN
2013 Impact Factor: 2.206
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYao, Ren_US
dc.contributor.authorDeng, Len_US
dc.date.accessioned2012-08-08T08:35:10Z-
dc.date.available2012-08-08T08:35:10Z-
dc.date.issued2012en_US
dc.identifier.citationSemiconductor Science And Technology, 2012, v. 27 n. 5, article no. 055015en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/155752-
dc.description.abstractMetalpolymerinsulatorsilicon (MPIS) structures based on poly(3-hexylthiophene) (P3HT) as an active semiconductor layer were fabricated on a highly doped n+Si substrate with SiO 2or HfTiO as the insulating layer. The electrical characteristics of the MPIS structures have been investigated by means of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. The dependence of the capacitance on frequency was clearly observed for the two samples, which is explained with a long-relaxation time for carriers in the bulk of the polymer semiconductor for the MPIS structure with SiO 2 insulator and with charge trapping in defect states at the P3HT/HfTiO interface for the MPIS structure with HfTiO insulator. A conductance peak is absent at high test frequency, while the conductance peak is obvious at low test frequency due to a higher probability for capture and release of carriers by the interface states at low frequency. The interface-state density is estimated as 1.9 × 10 11 cm ?2 eV ?1 and 6.3 × 10 10 cm ?2 eV ?1 for the P3HT/HfTiO and P3HT/SiO 2 interfaces, respectively by C-V and G-V measurements at a frequency of 10 kHz. © 2012 IOP Publishing Ltd.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleInterface states in polymer thin-film transistors based on poly(3-hexylthiophene)en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/27/5/055015en_US
dc.identifier.scopuseid_2-s2.0-84860289339en_US
dc.identifier.hkuros225754-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84860289339&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume27en_US
dc.identifier.issue5en_US
dc.identifier.isiWOS:000303758900016-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLiu, Y=36062331200en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridYao, R=16033337600en_US
dc.identifier.scopusauthoridDeng, L=55199749000en_US

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