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Article: Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography

TitleTunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography
Authors
KeywordsDecay life-time
Emission bands
Finite difference time domain simulations
Ingan/gan multi-quantum well
Nano sphere lithography
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 14, article no. 141101 How to Cite?
AbstractThe fabrication of close-packed clover-shaped photonic crystal structure on GaN by dual-step nanosphere lithography is demonstrated. By shrinkage of spheres prior to pattern transfer, a non-closed-packed clover-shaped photonic bandgap (PBG) structure, as designed by modified 3D finite-difference time-domain simulation, is also realized. The PBG of the close-packed and non-close-packed clover-shaped structures is verified through optical transmission spectroscopy, found to agree well with simulated results. A threefold enhancement in photoluminescence (PL) intensity is observed from the optimized structure, when the PBG is tuned to overlap with the emission band of the InGaN/GaN multi-quantum wells. From time-resolved PL measurements, shortened decay lifetimes are observed. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155748
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
GRF of the Research Grant Council of Hong KongHKU 7117/11 E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project HKU 7117/11 E).

References

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_US
dc.contributor.authorMa, Zen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:35:09Z-
dc.date.available2012-08-08T08:35:09Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 14, article no. 141101en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155748-
dc.description.abstractThe fabrication of close-packed clover-shaped photonic crystal structure on GaN by dual-step nanosphere lithography is demonstrated. By shrinkage of spheres prior to pattern transfer, a non-closed-packed clover-shaped photonic bandgap (PBG) structure, as designed by modified 3D finite-difference time-domain simulation, is also realized. The PBG of the close-packed and non-close-packed clover-shaped structures is verified through optical transmission spectroscopy, found to agree well with simulated results. A threefold enhancement in photoluminescence (PL) intensity is observed from the optimized structure, when the PBG is tuned to overlap with the emission band of the InGaN/GaN multi-quantum wells. From time-resolved PL measurements, shortened decay lifetimes are observed. © 2012 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2012, v. 100 n. 14, article no. 141101) and may be found at (http://apl.aip.org/resource/1/applab/v100/i14/p141101_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectDecay life-time-
dc.subjectEmission bands-
dc.subjectFinite difference time domain simulations-
dc.subjectIngan/gan multi-quantum well-
dc.subjectNano sphere lithography-
dc.titleTunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithographyen_US
dc.typeArticleen_US
dc.identifier.emailMa, Z: malctt@hku.hken_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hk, hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3698392en_US
dc.identifier.scopuseid_2-s2.0-84859792153en_US
dc.identifier.hkuros204474-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84859792153&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume100en_US
dc.identifier.issue14, article no. 141101en_US
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000302567800001-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridMa, Z=8504594000en_US
dc.identifier.scopusauthoridLi, KH=8976237500en_US

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