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Article: Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography
Title | Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography | ||||
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Authors | |||||
Keywords | Decay life-time Emission bands Finite difference time domain simulations Ingan/gan multi-quantum well Nano sphere lithography | ||||
Issue Date | 2012 | ||||
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||
Citation | Applied Physics Letters, 2012, v. 100 n. 14, article no. 141101 How to Cite? | ||||
Abstract | The fabrication of close-packed clover-shaped photonic crystal structure on GaN by dual-step nanosphere lithography is demonstrated. By shrinkage of spheres prior to pattern transfer, a non-closed-packed clover-shaped photonic bandgap (PBG) structure, as designed by modified 3D finite-difference time-domain simulation, is also realized. The PBG of the close-packed and non-close-packed clover-shaped structures is verified through optical transmission spectroscopy, found to agree well with simulated results. A threefold enhancement in photoluminescence (PL) intensity is observed from the optimized structure, when the PBG is tuned to overlap with the emission band of the InGaN/GaN multi-quantum wells. From time-resolved PL measurements, shortened decay lifetimes are observed. © 2012 American Institute of Physics. | ||||
Persistent Identifier | http://hdl.handle.net/10722/155748 | ||||
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 | ||||
ISI Accession Number ID |
Funding Information: This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project HKU 7117/11 E). | ||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, KH | en_US |
dc.contributor.author | Ma, Z | en_US |
dc.contributor.author | Choi, HW | en_US |
dc.date.accessioned | 2012-08-08T08:35:09Z | - |
dc.date.available | 2012-08-08T08:35:09Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Applied Physics Letters, 2012, v. 100 n. 14, article no. 141101 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155748 | - |
dc.description.abstract | The fabrication of close-packed clover-shaped photonic crystal structure on GaN by dual-step nanosphere lithography is demonstrated. By shrinkage of spheres prior to pattern transfer, a non-closed-packed clover-shaped photonic bandgap (PBG) structure, as designed by modified 3D finite-difference time-domain simulation, is also realized. The PBG of the close-packed and non-close-packed clover-shaped structures is verified through optical transmission spectroscopy, found to agree well with simulated results. A threefold enhancement in photoluminescence (PL) intensity is observed from the optimized structure, when the PBG is tuned to overlap with the emission band of the InGaN/GaN multi-quantum wells. From time-resolved PL measurements, shortened decay lifetimes are observed. © 2012 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 100 n. 14, article no. 141101 and may be found at https://doi.org/10.1063/1.3698392 | - |
dc.subject | Decay life-time | - |
dc.subject | Emission bands | - |
dc.subject | Finite difference time domain simulations | - |
dc.subject | Ingan/gan multi-quantum well | - |
dc.subject | Nano sphere lithography | - |
dc.title | Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography | en_US |
dc.type | Article | en_US |
dc.identifier.email | Ma, Z: malctt@hku.hk | en_US |
dc.identifier.email | Choi, HW: hwchoi@eee.hku.hk, hwchoi@hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | en_US |
dc.description.nature | published_or_final_version | en_US |
dc.identifier.doi | 10.1063/1.3698392 | en_US |
dc.identifier.scopus | eid_2-s2.0-84859792153 | en_US |
dc.identifier.hkuros | 204474 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-84859792153&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 100 | en_US |
dc.identifier.issue | 14 | - |
dc.identifier.spage | article no. 141101 | - |
dc.identifier.epage | article no. 141101 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.isi | WOS:000302567800001 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Choi, HW=7404334877 | en_US |
dc.identifier.scopusauthorid | Ma, Z=8504594000 | en_US |
dc.identifier.scopusauthorid | Li, KH=8976237500 | en_US |
dc.identifier.issnl | 0003-6951 | - |