Article: A new noncontact method for the prediction of both internal thermal resistance and junction temperature of white light-emitting diodes
| Title | A new noncontact method for the prediction of both internal thermal resistance and junction temperature of white light-emitting diodes | ||||
|---|---|---|---|---|---|
| Authors | Tao, X2 Chen, H Li, SN1 Hui, SYR1 3 | ||||
| Keywords | Light-Emitting Diodes (LED) System Theory Lighting | ||||
| Issue Date | 2012 | ||||
| Publisher | IEEE | ||||
| Citation | IEEE Transactions on Power Electronics, 2012, v. 27 n. 4, p. 2184-2192 [How to Cite?] DOI: http://dx.doi.org/10.1109/TPEL.2011.2169461 | ||||
| Abstract | Although critical to the lifetime of LED, the junction temperature of LED cannot be measured easily. Based on the general photoelectrothermal theory for LED systems, the coefficient for the reduction of luminous efficacy with junction temperature is first related to the characteristic temperature of the LED. Then, a noncontact method for estimating the internal junction temperature T j and junction-case thermal resistance R jc of LED from the external power and luminous flux measurements is presented and verified practically. Since these external measurements can be obtained easily, the proposal provides a simple tool for checking T j in new LED system designs without using expensive or sophisticated thermal monitoring equipment for the LED junctions. The proposed method has been checked with measurements on LED devices from three different brands with both constant and nonconstant R jc. The theoretical predictions are found to be highly consistent with practical measurements. © 2011 IEEE. | ||||
| ISSN | 0885-8993 2011 Impact Factor: 4.65 2011 SCImago Journal Rankings: 0.135 | ||||
| DOI | http://dx.doi.org/10.1109/TPEL.2011.2169461 | ||||
| ISI Accession Number ID | WOS:000300581500048
Funding Information: Manuscript received July 28, 2011; accepted August 29, 2011. Date of current version February 20, 2012. This work was supported by Hong Kong Research Grant Council under Project HKU-114411. Recommended for publication by Associate Editor J. M. Alonso. | ||||
| References | References in Scopus |
| dc.contributor.author | Tao, X | ||||
|---|---|---|---|---|---|
| dc.contributor.author | Chen, H | ||||
| dc.contributor.author | Li, SN | ||||
| dc.contributor.author | Hui, SYR | ||||
| dc.date.accessioned | 2012-08-08T08:35:06Z | ||||
| dc.date.available | 2012-08-08T08:35:06Z | ||||
| dc.date.issued | 2012 | ||||
| dc.description.abstract | Although critical to the lifetime of LED, the junction temperature of LED cannot be measured easily. Based on the general photoelectrothermal theory for LED systems, the coefficient for the reduction of luminous efficacy with junction temperature is first related to the characteristic temperature of the LED. Then, a noncontact method for estimating the internal junction temperature T j and junction-case thermal resistance R jc of LED from the external power and luminous flux measurements is presented and verified practically. Since these external measurements can be obtained easily, the proposal provides a simple tool for checking T j in new LED system designs without using expensive or sophisticated thermal monitoring equipment for the LED junctions. The proposed method has been checked with measurements on LED devices from three different brands with both constant and nonconstant R jc. The theoretical predictions are found to be highly consistent with practical measurements. © 2011 IEEE. | ||||
| dc.description.nature | published_or_final_version | ||||
| dc.identifier.citation | IEEE Transactions on Power Electronics, 2012, v. 27 n. 4, p. 2184-2192 [How to Cite?] DOI: http://dx.doi.org/10.1109/TPEL.2011.2169461 | ||||
| dc.identifier.doi | http://dx.doi.org/10.1109/TPEL.2011.2169461 | ||||
| dc.identifier.epage | 2192 | ||||
| dc.identifier.hkuros | 209240 | ||||
| dc.identifier.isi | WOS:000300581500048
Funding Information: Manuscript received July 28, 2011; accepted August 29, 2011. Date of current version February 20, 2012. This work was supported by Hong Kong Research Grant Council under Project HKU-114411. Recommended for publication by Associate Editor J. M. Alonso. | ||||
| dc.identifier.issn | 0885-8993 2011 Impact Factor: 4.65 2011 SCImago Journal Rankings: 0.135 | ||||
| dc.identifier.issue | 4 | ||||
| dc.identifier.scopus | eid_2-s2.0-84863115557 | ||||
| dc.identifier.spage | 2184 | ||||
| dc.identifier.uri | http://hdl.handle.net/10722/155738 | ||||
| dc.identifier.volume | 27 | ||||
| dc.language | eng | ||||
| dc.publisher | IEEE | ||||
| dc.publisher.place | United States | ||||
| dc.relation.ispartof | IEEE Transactions on Power Electronics | ||||
| dc.relation.references | References in Scopus | ||||
| dc.rights | IEEE Transactions on Power Electronics. Copyright © IEEE. | ||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||
| dc.rights.uri | 2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | ||||
| dc.subject | Light-Emitting Diodes (LED) System Theory | ||||
| dc.subject | Lighting | ||||
| dc.title | A new noncontact method for the prediction of both internal thermal resistance and junction temperature of white light-emitting diodes | ||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- City University of Hong Kong
- Imperial College London