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Article: InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography

TitleInGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography
Authors
KeywordsDamage-free
Emission characteristics
Finite difference time domain simulations
Gan light-emitting diodes
Indium tin oxide
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 6, article no. 061120 How to Cite?
AbstractClose-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage-free. An enhancement of up to 63.5% on optical output power from the lensed light-emitting diode (LED) has been observed. Lens-patterned LEDs are also found to exhibit reduced emission divergence. Three-dimensional finite-difference time-domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155732
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7117/11 E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7117/11 E).

References

 

DC FieldValueLanguage
dc.contributor.authorZhang, Qen_US
dc.contributor.authorLi, KHen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:35:04Z-
dc.date.available2012-08-08T08:35:04Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 6, article no. 061120en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155732-
dc.description.abstractClose-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage-free. An enhancement of up to 63.5% on optical output power from the lensed light-emitting diode (LED) has been observed. Lens-patterned LEDs are also found to exhibit reduced emission divergence. Three-dimensional finite-difference time-domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results. © 2012 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2012, v. 100 n. 6, article no. 061120) and may be found at (http://apl.aip.org/resource/1/applab/v100/i6/p061120_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectDamage-free-
dc.subjectEmission characteristics-
dc.subjectFinite difference time domain simulations-
dc.subjectGan light-emitting diodes-
dc.subjectIndium tin oxide-
dc.titleInGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithographyen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hk, hwchoi@hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3684505en_US
dc.identifier.scopuseid_2-s2.0-84863160499-
dc.identifier.hkuros204473-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84857214332&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume100en_US
dc.identifier.issue6, article no. 061120en_US
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000300214000020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridLi, KH=8976237500en_US
dc.identifier.scopusauthoridZhang, Q=55006214300en_US

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