File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Raman and photoluminescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar array

TitleRaman and photoluminescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar array
Authors
KeywordsAs-grown
Broadband emission
Crystal qualities
Emission bands
First order
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2011, v. 110 n. 9 How to Cite?
AbstractHigh crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been fabricated by focused ion beam followed by wet etch treatments to remove the ion damage. The first order Raman spectra reveal a well-built additional peak when the diameter of the nanopillars is less than 220 nm. This peak is also observed in the GaN pillars without MQW and is clearly assigned to the surface optical (SO) mode originating from the A 1 phonon in wurtzite GaN. The frequency of this SO mode is found to be sensitive with the diameter and surface roughness of the nanopillars. Temperature-variable photoluminescence measurements show that a broadband emission in the as-grown sample split into the two well-resolved bands for nanopillars and the emission band at the higher energy side quickly thermally quenched. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155696
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, XHen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2012-08-08T08:34:52Z-
dc.date.available2012-08-08T08:34:52Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal Of Applied Physics, 2011, v. 110 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155696-
dc.description.abstractHigh crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been fabricated by focused ion beam followed by wet etch treatments to remove the ion damage. The first order Raman spectra reveal a well-built additional peak when the diameter of the nanopillars is less than 220 nm. This peak is also observed in the GaN pillars without MQW and is clearly assigned to the surface optical (SO) mode originating from the A 1 phonon in wurtzite GaN. The frequency of this SO mode is found to be sensitive with the diameter and surface roughness of the nanopillars. Temperature-variable photoluminescence measurements show that a broadband emission in the as-grown sample split into the two well-resolved bands for nanopillars and the emission band at the higher energy side quickly thermally quenched. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093111) and may be found at (http://jap.aip.org/resource/1/japiau/v110/i9/p093111_s1).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAs-grown-
dc.subjectBroadband emission-
dc.subjectCrystal qualities-
dc.subjectEmission bands-
dc.subjectFirst order-
dc.titleRaman and photoluminescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar arrayen_HK
dc.typeArticleen_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChoi, HW: hwchoi@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3658866en_HK
dc.identifier.scopuseid_2-s2.0-81355132385en_HK
dc.identifier.hkuros204459-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-81355132385&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000297062100011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, XH=36715744900en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats