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Article: Largely extended light-emission shift of ZnSe nanostructures with temperature

TitleLargely extended light-emission shift of ZnSe nanostructures with temperature
Authors
Issue Date2011
PublisherOptical Society of America. The Journal's web site is located at http://ao.osa.org/journal/ao/about.cfm
Citation
Applied Optics, 2011, v. 50 n. 31, p. G37-G41 How to Cite?
AbstractZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2.7eV. When the temperature is reduced to 150K, the peak wavelength shifts to 2.3eV with yellowish emission and then blue emission with the peak at 2.7eV at temperature less than 50K. The overall wavelength shift of 700meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature- indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energyof each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined. © 2011 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/155682
ISSN
2010 Impact Factor: 1.707
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLeung, YPen_HK
dc.date.accessioned2012-08-08T08:34:48Z-
dc.date.available2012-08-08T08:34:48Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Optics, 2011, v. 50 n. 31, p. G37-G41en_HK
dc.identifier.issn0003-6935en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155682-
dc.description.abstractZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2.7eV. When the temperature is reduced to 150K, the peak wavelength shifts to 2.3eV with yellowish emission and then blue emission with the peak at 2.7eV at temperature less than 50K. The overall wavelength shift of 700meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature- indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energyof each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined. © 2011 Optical Society of America.en_HK
dc.languageengen_US
dc.publisherOptical Society of America. The Journal's web site is located at http://ao.osa.org/journal/ao/about.cfmen_HK
dc.relation.ispartofApplied Opticsen_HK
dc.titleLargely extended light-emission shift of ZnSe nanostructures with temperatureen_HK
dc.typeArticleen_HK
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hken_HK
dc.identifier.emailLeung, YP: ypleung@alumni.cuhk.neten_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.identifier.authorityLeung, YP=rp00145en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1364/AO.50.000G37en_HK
dc.identifier.pmid22086045-
dc.identifier.scopuseid_2-s2.0-80155141542en_HK
dc.identifier.hkuros208051-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80155141542&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume50en_HK
dc.identifier.issue31en_HK
dc.identifier.spageG37en_HK
dc.identifier.epageG41en_HK
dc.identifier.isiWOS:000297162700008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLeung, YP=8351421700en_HK

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