File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Enhanced sensing performance of MISiC schottky-diode hydrogen sensor by using HfON as gate insulator

TitleEnhanced sensing performance of MISiC schottky-diode hydrogen sensor by using HfON as gate insulator
Authors
KeywordsHfo 2
Hydrogen Sensors
Nitridation
Schottky Diode
Silicon Carbide
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7361
Citation
IEEE Sensors Journal, 2011, v. 11 n. 11, p. 2940-2946 How to Cite?
AbstractMISiC Schottky-diode hydrogen sensor with HfON gate insulator fabricated by NO nitridation is investigated. The hydrogen-sensing characteristics of this novel sensor are studied by doing steady-state and transient measurements at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that this novel sensor can rapidly respond to hydrogen variation and can give a significant response even at a low H 2 concentration of 48-ppm, e.g., a sensitivity of 81% is achieved at 450°C and 2.5 V, which is two times higher than its HfO 2 counterpart. The enhanced sensitivity of the device should be attributed to a remarkable reduction of the current of the sensor before hydrogen exposure by the NO nitridation because the NO nitridation can passivate the O vacancies in the insulator and facilitate the formation of a SiO 2 interlayer to suppress the leakage current associated with high-k materials. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155681
ISSN
2015 Impact Factor: 1.889
2015 SCImago Journal Rankings: 0.759
ISI Accession Number ID
Funding AgencyGrant Number
Nanotechnology Research Institute of The University of Hong Kong00600009
RGC of HKSAR, ChinaHKU 713310E
Funding Information:

This work was supported in part by the University Development Fund (Nanotechnology Research Institute, 00600009) of The University of Hong Kong and RGC of HKSAR, China (Project No. HKU 713310E). The associate editor coordinating the review of this paper and approving it for publication was Prof. Bernhard Jakoby.

References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:34:48Z-
dc.date.available2012-08-08T08:34:48Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Sensors Journal, 2011, v. 11 n. 11, p. 2940-2946en_US
dc.identifier.issn1530-437Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/155681-
dc.description.abstractMISiC Schottky-diode hydrogen sensor with HfON gate insulator fabricated by NO nitridation is investigated. The hydrogen-sensing characteristics of this novel sensor are studied by doing steady-state and transient measurements at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that this novel sensor can rapidly respond to hydrogen variation and can give a significant response even at a low H 2 concentration of 48-ppm, e.g., a sensitivity of 81% is achieved at 450°C and 2.5 V, which is two times higher than its HfO 2 counterpart. The enhanced sensitivity of the device should be attributed to a remarkable reduction of the current of the sensor before hydrogen exposure by the NO nitridation because the NO nitridation can passivate the O vacancies in the insulator and facilitate the formation of a SiO 2 interlayer to suppress the leakage current associated with high-k materials. © 2006 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7361-
dc.relation.ispartofIEEE Sensors Journalen_US
dc.rightsIEEE Sensors Journal. Copyright © IEEE-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectHfo 2en_US
dc.subjectHydrogen Sensorsen_US
dc.subjectNitridationen_US
dc.subjectSchottky Diodeen_US
dc.subjectSilicon Carbideen_US
dc.titleEnhanced sensing performance of MISiC schottky-diode hydrogen sensor by using HfON as gate insulatoren_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/JSEN.2011.2148709en_US
dc.identifier.scopuseid_2-s2.0-80055044237en_US
dc.identifier.hkuros225727-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80055044237&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue11en_US
dc.identifier.spage2940en_US
dc.identifier.epage2946en_US
dc.identifier.isiWOS:000304164900006-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridTang, WM=24438163600en_US
dc.identifier.scopusauthoridLeung, CH=7402612415en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats