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Article: Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications

TitleImproved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications
Authors
KeywordsFlash Memory
High-Dielectric Constant (High-K)
Inter-Poly Dielectric (Ipd)
Y Xal Yo
Yttrium Doping
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 3, p. 490-494 How to Cite?
AbstractYttrium-doped Al 2O 3Y xAl yO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO 2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be suppressed by Y doping through the transformation of silica into silicate. Compared with Al 2O 3 and Y 2O 3 films, the optimized Y xAl yO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized Y xAl yO film is a promising candidate as the IPD for flash memory. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155655
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713308E
University of Hong Kong200707176147
(Nanotechnology Research Institute) of the University of Hong Kong00600009
National Nature Science Foundation of China60976091
Funding Information:

This work is supported by the RGC of HKSAR, China (Project HKU 713308E), the Small Project Funding of the University of Hong Kong (Project 200707176147), the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong, and the National Nature Science Foundation of China (Grant 60976091).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorHuang, XDen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:34:41Z-
dc.date.available2012-08-08T08:34:41Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 3, p. 490-494en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155655-
dc.description.abstractYttrium-doped Al 2O 3Y xAl yO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO 2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be suppressed by Y doping through the transformation of silica into silicate. Compared with Al 2O 3 and Y 2O 3 films, the optimized Y xAl yO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized Y xAl yO film is a promising candidate as the IPD for flash memory. © 2010 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectFlash Memoryen_US
dc.subjectHigh-Dielectric Constant (High-K)en_US
dc.subjectInter-Poly Dielectric (Ipd)en_US
dc.subjectY Xal Yoen_US
dc.subjectYttrium Dopingen_US
dc.titleImproved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2011.2156796en_US
dc.identifier.scopuseid_2-s2.0-80052623011en_US
dc.identifier.hkuros225729-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80052623011&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue3en_US
dc.identifier.spage490en_US
dc.identifier.epage494en_US
dc.identifier.isiWOS:000294856900017-
dc.publisher.placeUnited Statesen_US
dc.relation.projectHigh-k Gate Dielectrics for High-Performance Germanium MISFET's-
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridLiu, L=35778603700en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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