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Conference Paper: Tuning of photonic bandgap via dimensional control of nano-pillars

TitleTuning of photonic bandgap via dimensional control of nano-pillars
Authors
Li, KHChoi, HW
KeywordsNanosphere Lithography
Photonic Bandgap
Photonic Crystal
Issue Date2011
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
International Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19–24 September 2010. In Physica Status Solidi. C: Current Topics in Solid State Physics, 2011, v. 8 n. 7-8, p. 2351-2353 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.201000971
AbstractWe report on the fabrication and optical characterization of ordered hexagonal arrays of non-closed-packed GaN nano-pillars formed by nanosphere lithography. A self-assembled two-dimensional monolayer of silica nanosphere mask was coated by the technique of spin-coating. A silica-selective dry etch recipe was employed to adjust the diameters of the nanospheres. With the dimension-adjusted nanospheres as an etch mask, the pattern was transferred to a wafer to form a photonic crystal structure. The photonic bandgap structures were designed using Plane Wave Expansion algorithm for bandgap computations. The existence and positions of bandgaps have been verified through angular resolved reflectivity measurement, which correlated well with prediction of simulations. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/155638
ISSN
1862-6351
2020 SCImago Journal Rankings: 0.210
ISI Accession Number ID
WOS:000301581500107
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:34:36Z-
dc.date.available2012-08-08T08:34:36Z-
dc.date.issued2011en_US
dc.identifier.citationInternational Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19–24 September 2010. In Physica Status Solidi. C: Current Topics in Solid State Physics, 2011, v. 8 n. 7-8, p. 2351-2353en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/10722/155638-
dc.description.abstractWe report on the fabrication and optical characterization of ordered hexagonal arrays of non-closed-packed GaN nano-pillars formed by nanosphere lithography. A self-assembled two-dimensional monolayer of silica nanosphere mask was coated by the technique of spin-coating. A silica-selective dry etch recipe was employed to adjust the diameters of the nanospheres. With the dimension-adjusted nanospheres as an etch mask, the pattern was transferred to a wafer to form a photonic crystal structure. The photonic bandgap structures were designed using Plane Wave Expansion algorithm for bandgap computations. The existence and positions of bandgaps have been verified through angular resolved reflectivity measurement, which correlated well with prediction of simulations. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_US
dc.relation.ispartofPhysica Status Solidi. C: Current Topics in Solid State Physicsen_US
dc.subjectNanosphere Lithographyen_US
dc.subjectPhotonic Bandgapen_US
dc.subjectPhotonic Crystalen_US
dc.titleTuning of photonic bandgap via dimensional control of nano-pillarsen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssc.201000971en_US
dc.identifier.scopuseid_2-s2.0-79960730456en_US
dc.identifier.hkuros192483-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960730456&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8en_US
dc.identifier.issue7-8en_US
dc.identifier.spage2351en_US
dc.identifier.epage2353en_US
dc.identifier.isiWOS:000301581500107-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridLi, KH=8976237500en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.issnl1610-1634-

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