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Conference Paper: Liquid-immersion laser micromachining of GaN trenches and its application in device fabrication

TitleLiquid-immersion laser micromachining of GaN trenches and its application in device fabrication
Authors
KeywordsGallium Nitride
Laser Micromachining
Light-Emitting Diode
Liquid Immersion
Issue Date2011
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
International Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19–24 September 2010. In Physica Status Solidi. C: Current Topics Ii Solid State Physics, 2011, v. 8 n. 7-8, p. 2229-2231 How to Cite?
AbstractTrench formation for device isolation on GaN light-emitting diode (LED) wafer via nanosecond pulsed laser micromachining in deionized (DI) water is demonstrated. The basis of this technique relies on the large difference between the ablation thresholds of GaN and sapphire, so that the ablation can automatically terminate at the GaN/sapphire interface to produce a smooth and tapered trench. Compared with micromachining in ambient air, re-deposition and re-solidification of ablated material on the sidewalls are found to be greatly reduced in DI water. In addition, liquid immersion admits a larger focus offset tolerance and a better control of the trench width through adjustment of pulse energy. As an application in rapid device prototyping, a 5 × 7 dot-matrix microdisplay with laser-micromachined trenches for pixel separation is demonstrated, illustrating the effectiveness of this processing technique. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/155637
ISSN
2015 SCImago Journal Rankings: 0.392
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorMak, GYen_US
dc.contributor.authorLam, EYen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:34:36Z-
dc.date.available2012-08-08T08:34:36Z-
dc.date.issued2011en_US
dc.identifier.citationInternational Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, USA, 19–24 September 2010. In Physica Status Solidi. C: Current Topics Ii Solid State Physics, 2011, v. 8 n. 7-8, p. 2229-2231en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/10722/155637-
dc.description.abstractTrench formation for device isolation on GaN light-emitting diode (LED) wafer via nanosecond pulsed laser micromachining in deionized (DI) water is demonstrated. The basis of this technique relies on the large difference between the ablation thresholds of GaN and sapphire, so that the ablation can automatically terminate at the GaN/sapphire interface to produce a smooth and tapered trench. Compared with micromachining in ambient air, re-deposition and re-solidification of ablated material on the sidewalls are found to be greatly reduced in DI water. In addition, liquid immersion admits a larger focus offset tolerance and a better control of the trench width through adjustment of pulse energy. As an application in rapid device prototyping, a 5 × 7 dot-matrix microdisplay with laser-micromachined trenches for pixel separation is demonstrated, illustrating the effectiveness of this processing technique. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_US
dc.relation.ispartofPhysica Status Solidi. C: Current Topics in Solid State Physicsen_US
dc.subjectGallium Nitrideen_US
dc.subjectLaser Micromachiningen_US
dc.subjectLight-Emitting Diodeen_US
dc.subjectLiquid Immersionen_US
dc.titleLiquid-immersion laser micromachining of GaN trenches and its application in device fabricationen_US
dc.typeConference_Paperen_US
dc.identifier.emailLam, EY:elam@eee.hku.hken_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityLam, EY=rp00131en_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssc.201001088en_US
dc.identifier.scopuseid_2-s2.0-79960720313en_US
dc.identifier.hkuros192484-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960720313&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8en_US
dc.identifier.issue7-8en_US
dc.identifier.spage2229en_US
dc.identifier.epage2231en_US
dc.identifier.isiWOS:000301581500070-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridMak, GY=8678365200en_US
dc.identifier.scopusauthoridLam, EY=7102890004en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US

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