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Article: A novel MONOS memory with high-κ HfLaON as charge-storage layer

TitleA novel MONOS memory with high-κ HfLaON as charge-storage layer
Authors
KeywordsCharge-Storage Layer (Csl)
Endurance
Hflaon
Metaloxidenitrideoxidesilicon (Monos) Memory
Program/Erase (P/E) Characteristics
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 2, p. 244-247 How to Cite?
AbstractMIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metaloxidenitrideoxidesilicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger HfN and LaN bonds, and more stable atomic structure and HfLaONSiO 2 interface, as compared to the HfLaO dielectric. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155623
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60976091
Postdoctoral Science Foundation of China20100470056
University of Hong Kong (Nanotechnology Research Institute)00600009
Funding Information:

This work was supported in part by the National Natural Science Foundation of China under Grant 60976091, by the Postdoctoral Science Foundation of China under Grant 20100470056, and by the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorHuang, XDen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:34:25Z-
dc.date.available2012-08-08T08:34:25Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2011, v. 11 n. 2, p. 244-247en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155623-
dc.description.abstractMIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metaloxidenitrideoxidesilicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger HfN and LaN bonds, and more stable atomic structure and HfLaONSiO 2 interface, as compared to the HfLaO dielectric. © 2011 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCharge-Storage Layer (Csl)en_US
dc.subjectEnduranceen_US
dc.subjectHflaonen_US
dc.subjectMetaloxidenitrideoxidesilicon (Monos) Memoryen_US
dc.subjectProgram/Erase (P/E) Characteristicsen_US
dc.titleA novel MONOS memory with high-κ HfLaON as charge-storage layeren_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2011.2117428en_US
dc.identifier.scopuseid_2-s2.0-79959500531en_US
dc.identifier.hkuros225724-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959500531&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue2en_US
dc.identifier.spage244en_US
dc.identifier.epage247en_US
dc.identifier.isiWOS:000291819900005-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, L=35778603700en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridJi, F=8238553900en_US
dc.identifier.scopusauthoridHuang, XD=37057428400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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