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Article: Novel silicon-embedded coreless transformer for on-chip isolated signal transfer

TitleNovel silicon-embedded coreless transformer for on-chip isolated signal transfer
Authors
Wu, RSin, JKOHui, SY
KeywordsIntegrated Circuits
Isolation Technology
Magnetic Instruments
Transformers
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412
Citation
IEEE Magnetics Letters, 2011, v. 2, article no. 6500103 How to Cite?
DOI: http://dx.doi.org/10.1109/LMAG.2011.2129555
AbstractIn this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155619
ISSN
1949-307X
2021 Impact Factor: 1.520
2020 SCImago Journal Rankings: 0.428
ISI Accession Number ID
WOS:000208910300015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWu, Ren_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorHui, SYen_US
dc.date.accessioned2012-08-08T08:34:24Z-
dc.date.available2012-08-08T08:34:24Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Magnetics Letters, 2011, v. 2, article no. 6500103en_US
dc.identifier.issn1949-307Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/155619-
dc.description.abstractIn this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412-
dc.relation.ispartofIEEE Magnetics Lettersen_US
dc.subjectIntegrated Circuitsen_US
dc.subjectIsolation Technologyen_US
dc.subjectMagnetic Instrumentsen_US
dc.subjectTransformersen_US
dc.titleNovel silicon-embedded coreless transformer for on-chip isolated signal transferen_US
dc.typeArticleen_US
dc.identifier.emailHui, SY:ronhui@eee.hku.hken_US
dc.identifier.authorityHui, SY=rp01510en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/LMAG.2011.2129555en_US
dc.identifier.scopuseid_2-s2.0-79958710604en_US
dc.identifier.hkuros208777-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79958710604&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume2en_US
dc.identifier.isiWOS:000208910300015-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridWu, R=36723039000en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridHui, SY=7202831744en_US
dc.identifier.issnl1949-3088-

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