File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Novel silicon-embedded coreless transformer for on-chip isolated signal transfer

TitleNovel silicon-embedded coreless transformer for on-chip isolated signal transfer
Authors
KeywordsIntegrated Circuits
Isolation Technology
Magnetic Instruments
Transformers
Issue Date2011
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412
Citation
IEEE Magnetics Letters, 2011, v. 2, article no. 6500103 How to Cite?
AbstractIn this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155619
ISSN
2015 Impact Factor: 1.978
2015 SCImago Journal Rankings: 0.488
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWu, Ren_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorHui, SYen_US
dc.date.accessioned2012-08-08T08:34:24Z-
dc.date.available2012-08-08T08:34:24Z-
dc.date.issued2011en_US
dc.identifier.citationIEEE Magnetics Letters, 2011, v. 2, article no. 6500103en_US
dc.identifier.issn1949-307Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/155619-
dc.description.abstractIn this letter, a novel silicon-embedded coreless transformer is proposed and demonstrated. The transformer is fabricated in the thick bottom layer of a silicon substrate and connected to the frontside through vias opened in the thin top layer where all other components of the system can be fabricated. A 5-turn coreless transformer fabricated using this monolithic transformer technology achieves a small area of 2 mm 2 and a good voltage gain of larger than -0.8 dB (load = 50 Ω, best reported so far) from 12 to 100 MHz. This technology shows great potential for on-chip isolated signal transfer. © 2011 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=5165412-
dc.relation.ispartofIEEE Magnetics Lettersen_US
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectIntegrated Circuitsen_US
dc.subjectIsolation Technologyen_US
dc.subjectMagnetic Instrumentsen_US
dc.subjectTransformersen_US
dc.titleNovel silicon-embedded coreless transformer for on-chip isolated signal transferen_US
dc.typeArticleen_US
dc.identifier.emailHui, SY:ronhui@eee.hku.hken_US
dc.identifier.authorityHui, SY=rp01510en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/LMAG.2011.2129555en_US
dc.identifier.scopuseid_2-s2.0-79958710604en_US
dc.identifier.hkuros208777-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79958710604&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume2en_US
dc.identifier.isiWOS:000208910300015-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridWu, R=36723039000en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridHui, SY=7202831744en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats