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Article: Effects of N2-annealing conditions on the sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor

TitleEffects of N2-annealing conditions on the sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensor
Authors
Tang, WMLeung, CHLai, PT
KeywordsHfo2
Hydrogen Sensors
Schottky Diode
Silicon Carbide
Issue Date2010
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2010, v. 519 n. 1, p. 505-511 How to Cite?
DOI: http://dx.doi.org/10.1016/j.tsf.2010.08.090
AbstractHafnium oxide (HfO2) used as the gate insulator of metal-insulator-SiC Schottky-diode hydrogen sensors is annealed in nitrogen at different temperatures and durations for achieving a better performance. The hydrogen-sensing properties of these samples are compared with each other by taking measurements under various temperatures and hydrogen concentrations using a computer-controlled measurement system. The sensor response of the device is found to increase with the annealing temperature and time because higher annealing temperature and longer annealing time can enhance the densification of the HfO2 film; improve the oxide stoichiometry and facilitate the growth of an interfacial layer to give better interface quality, thus causing a significant reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and conduction mechanism of the devices are also investigated. © 2010 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155586
ISSN
0040-6090
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID
WOS:000283955200090
Funding AgencyGrant Number
Nanotechnology Research Institute of the University of Hong Kong00600009
RGC of HKSAR, ChinaHKU 713310E
Funding Information:

We would like to acknowledge the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong and RGC of HKSAR, China (Project No. HKU 713310E).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:34:13Z-
dc.date.available2012-08-08T08:34:13Z-
dc.date.issued2010en_US
dc.identifier.citationThin Solid Films, 2010, v. 519 n. 1, p. 505-511en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/155586-
dc.description.abstractHafnium oxide (HfO2) used as the gate insulator of metal-insulator-SiC Schottky-diode hydrogen sensors is annealed in nitrogen at different temperatures and durations for achieving a better performance. The hydrogen-sensing properties of these samples are compared with each other by taking measurements under various temperatures and hydrogen concentrations using a computer-controlled measurement system. The sensor response of the device is found to increase with the annealing temperature and time because higher annealing temperature and longer annealing time can enhance the densification of the HfO2 film; improve the oxide stoichiometry and facilitate the growth of an interfacial layer to give better interface quality, thus causing a significant reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and conduction mechanism of the devices are also investigated. © 2010 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectHfo2en_US
dc.subjectHydrogen Sensorsen_US
dc.subjectSchottky Diodeen_US
dc.subjectSilicon Carbideen_US
dc.titleEffects of N2-annealing conditions on the sensing properties of Pt/HfO2/SiC Schottky-diode hydrogen sensoren_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2010.08.090en_US
dc.identifier.scopuseid_2-s2.0-77957754400en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77957754400&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume519en_US
dc.identifier.issue1en_US
dc.identifier.spage505en_US
dc.identifier.epage511en_US
dc.identifier.isiWOS:000283955200090-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridTang, WM=24438163600en_US
dc.identifier.scopusauthoridLeung, CH=7402612415en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.issnl0040-6090-

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