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Article: Current Saturation Mechanisms in Junction Field-Effect Transistors

TitleCurrent Saturation Mechanisms in Junction Field-Effect Transistors
Authors
Issue Date1972
Citation
Advances In Electronics And Electron Physics, 1972, v. 31 C, p. 247-265 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/155584
ISSN
2000 Impact Factor: 1.128
1999 SCImago Journal Rankings: 0.100

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:34:12Z-
dc.date.available2012-08-08T08:34:12Z-
dc.date.issued1972en_US
dc.identifier.citationAdvances In Electronics And Electron Physics, 1972, v. 31 C, p. 247-265en_US
dc.identifier.issn0065-2539en_US
dc.identifier.urihttp://hdl.handle.net/10722/155584-
dc.languageengen_US
dc.relation.ispartofAdvances in Electronics and Electron Physicsen_US
dc.titleCurrent Saturation Mechanisms in Junction Field-Effect Transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0065-2539(08)60225-5en_US
dc.identifier.scopuseid_2-s2.0-77956977837en_US
dc.identifier.volume31en_US
dc.identifier.issueCen_US
dc.identifier.spage247en_US
dc.identifier.epage265en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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