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Article: A 30 μ W CMOS bandgap reference featuring a 1.5-6 mA output driving current and a Miller-effect startup circuit

TitleA 30 μ W CMOS bandgap reference featuring a 1.5-6 mA output driving current and a Miller-effect startup circuit
Authors
KeywordsCmos Bandgap Reference
Delay Circuit
Low Power
Low Voltage
Startup Circuit
Issue Date2009
Citation
Microelectronics Journal, 2009, v. 40 n. 11, p. 1514-1522 How to Cite?
AbstractWe present a pure CMOS bandgap voltage reference with a low quiescent current and high output current driving capability. The circuit sources a driving current of up to 1.5 mA with the reference voltage kept above 98.5% of its designated 1.2 V, and up to 6 mA before the voltage drops to 90%. The circuit achieves a very low supply current of 13 μ A, a low power of 30 μ W, a line regulation of ± 2.5 mV / V and a load regulation of ± 7 mV / mA. The reference is implemented in a 1 μ m pure CMOS process with Vtn ≈ | Vtp | ≈ 0.7 V at 25 {ring operator} C using substrate pnp. A startup circuit, which shuts down itself after a controlled delay using Miller effect, is also introduced. By utilizing the body effect of the input transistors, the turn-on threshold of the startup circuit is raised to about 1 V, making it a perfect match for the reference architecture. Silicon measurements are in good agreement with simulations. © 2009 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155543
ISSN
2015 Impact Factor: 0.876
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, DCWen_US
dc.contributor.authorKwong, DKKen_US
dc.contributor.authorWong, Nen_US
dc.date.accessioned2012-08-08T08:34:01Z-
dc.date.available2012-08-08T08:34:01Z-
dc.date.issued2009en_US
dc.identifier.citationMicroelectronics Journal, 2009, v. 40 n. 11, p. 1514-1522en_US
dc.identifier.issn0026-2692en_US
dc.identifier.urihttp://hdl.handle.net/10722/155543-
dc.description.abstractWe present a pure CMOS bandgap voltage reference with a low quiescent current and high output current driving capability. The circuit sources a driving current of up to 1.5 mA with the reference voltage kept above 98.5% of its designated 1.2 V, and up to 6 mA before the voltage drops to 90%. The circuit achieves a very low supply current of 13 μ A, a low power of 30 μ W, a line regulation of ± 2.5 mV / V and a load regulation of ± 7 mV / mA. The reference is implemented in a 1 μ m pure CMOS process with Vtn ≈ | Vtp | ≈ 0.7 V at 25 {ring operator} C using substrate pnp. A startup circuit, which shuts down itself after a controlled delay using Miller effect, is also introduced. By utilizing the body effect of the input transistors, the turn-on threshold of the startup circuit is raised to about 1 V, making it a perfect match for the reference architecture. Silicon measurements are in good agreement with simulations. © 2009 Elsevier Ltd. All rights reserved.en_US
dc.languageengen_US
dc.relation.ispartofMicroelectronics Journalen_US
dc.subjectCmos Bandgap Referenceen_US
dc.subjectDelay Circuiten_US
dc.subjectLow Poweren_US
dc.subjectLow Voltageen_US
dc.subjectStartup Circuiten_US
dc.titleA 30 μ W CMOS bandgap reference featuring a 1.5-6 mA output driving current and a Miller-effect startup circuiten_US
dc.typeArticleen_US
dc.identifier.emailWong, N:nwong@eee.hku.hken_US
dc.identifier.authorityWong, N=rp00190en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.mejo.2009.01.012en_US
dc.identifier.scopuseid_2-s2.0-70350574645en_US
dc.identifier.hkuros164696-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350574645&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume40en_US
dc.identifier.issue11en_US
dc.identifier.spage1514en_US
dc.identifier.epage1522en_US
dc.identifier.isiWOS:000272266900003-
dc.identifier.scopusauthoridNg, DCW=7201645733en_US
dc.identifier.scopusauthoridKwong, DKK=22734059200en_US
dc.identifier.scopusauthoridWong, N=35235551600en_US
dc.identifier.citeulike5096820-

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