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Article: Electrical characteristics of MOS capacitors with HfTiON as gate dielectric

TitleElectrical characteristics of MOS capacitors with HfTiON as gate dielectric
Authors
KeywordsCo-Reactive Sputter
Gate-Leakage Current
Hftion
High-K Gate Dielectric
Issue Date2009
Citation
Journal Wuhan University Of Technology, Materials Science Edition, 2009, v. 24 n. 1, p. 57-60 How to Cite?
AbstractHfTiN film was deposited by co-reactive sputtering and then was annealed in different gas ambients at temperature of 650 °C for 2 min to form HfTiON film. Capacitance-voltage and gate-leakage characteristics were investigated. The N2O-annealed sample exhibited small interface-state and oxide-charge densities, and enhanced reliability, which was attributed to the fact that nitridation could create strong SiN bonds to passivate dangling Si bonds and replaced strained Si-O bonds, thus forming a hardened dielectric/Si interface with high reliability. As a result, it is possible to prepare high-quality HfTiON gate dielectric of small-scaling CMOS devices in the industry-preferred N2O environment. © 2009 Wuhan University of Technology and Springer-Verlag GmbH.
Persistent Identifierhttp://hdl.handle.net/10722/155531
ISSN
2015 Impact Factor: 0.4
2015 SCImago Journal Rankings: 0.222
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China60376019
Funding Information:

Funded by the National Natural Science Foundation of China (NSFC, No. 60376019)

References

 

DC FieldValueLanguage
dc.contributor.authorChen, Wen_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorLai, Pen_US
dc.contributor.authorLi, Yen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorChan, Cen_US
dc.date.accessioned2012-08-08T08:33:58Z-
dc.date.available2012-08-08T08:33:58Z-
dc.date.issued2009en_US
dc.identifier.citationJournal Wuhan University Of Technology, Materials Science Edition, 2009, v. 24 n. 1, p. 57-60en_US
dc.identifier.issn1000-2413en_US
dc.identifier.urihttp://hdl.handle.net/10722/155531-
dc.description.abstractHfTiN film was deposited by co-reactive sputtering and then was annealed in different gas ambients at temperature of 650 °C for 2 min to form HfTiON film. Capacitance-voltage and gate-leakage characteristics were investigated. The N2O-annealed sample exhibited small interface-state and oxide-charge densities, and enhanced reliability, which was attributed to the fact that nitridation could create strong SiN bonds to passivate dangling Si bonds and replaced strained Si-O bonds, thus forming a hardened dielectric/Si interface with high reliability. As a result, it is possible to prepare high-quality HfTiON gate dielectric of small-scaling CMOS devices in the industry-preferred N2O environment. © 2009 Wuhan University of Technology and Springer-Verlag GmbH.en_US
dc.languageengen_US
dc.relation.ispartofJournal Wuhan University of Technology, Materials Science Editionen_US
dc.subjectCo-Reactive Sputteren_US
dc.subjectGate-Leakage Currenten_US
dc.subjectHftionen_US
dc.subjectHigh-K Gate Dielectricen_US
dc.titleElectrical characteristics of MOS capacitors with HfTiON as gate dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLai, P:laip@eee.hku.hken_US
dc.identifier.authorityLai, P=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s11595-009-1057-0en_US
dc.identifier.scopuseid_2-s2.0-67849106300en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67849106300&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume24en_US
dc.identifier.issue1en_US
dc.identifier.spage57en_US
dc.identifier.epage60en_US
dc.identifier.isiWOS:000264486000013-
dc.identifier.scopusauthoridChen, W=15119171500en_US
dc.identifier.scopusauthoridXu, J=7408556215en_US
dc.identifier.scopusauthoridLai, P=7202946460en_US
dc.identifier.scopusauthoridLi, Y=8704252400en_US
dc.identifier.scopusauthoridXu, S=14055300000en_US
dc.identifier.scopusauthoridChan, C=14053668100en_US
dc.identifier.citeulike4205939-

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