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Article: Metal-insulator-metal transistors

TitleMetal-insulator-metal transistors
Authors
Issue Date2008
Citation
Advanced Materials, 2008, v. 20 n. 11, p. 2120-2124 How to Cite?
AbstractA method to prepare metal-insulator-metal field-effect transistor (TFTs) is reported. The study fabricated a substrate-gate structure thin-film transistor by growing an oxide SiO 2 layer on a doped n-type Si substrates. The study also used a source and drain electrodes with a monolayer/multilayer films for thermal evaporation. A scanning electron microscopy (SEM) was used during the study to analyze the electrode-only structures. It was observed during the study that the reduction of the density of states can increase the relative field effects. The study also found that a channel can be prepared by the same material as the source and drain contacts for a metal TFT, that can reduce the cost of production of TFTs. It was also observed that the metal TFT has an infinite on-off ratio.
Persistent Identifierhttp://hdl.handle.net/10722/155496
ISSN
2015 Impact Factor: 18.96
2015 SCImago Journal Rankings: 9.021
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorStallinga, Pen_HK
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-08-08T08:33:47Z-
dc.date.available2012-08-08T08:33:47Z-
dc.date.issued2008en_HK
dc.identifier.citationAdvanced Materials, 2008, v. 20 n. 11, p. 2120-2124en_HK
dc.identifier.issn0935-9648en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155496-
dc.description.abstractA method to prepare metal-insulator-metal field-effect transistor (TFTs) is reported. The study fabricated a substrate-gate structure thin-film transistor by growing an oxide SiO 2 layer on a doped n-type Si substrates. The study also used a source and drain electrodes with a monolayer/multilayer films for thermal evaporation. A scanning electron microscopy (SEM) was used during the study to analyze the electrode-only structures. It was observed during the study that the reduction of the density of states can increase the relative field effects. The study also found that a channel can be prepared by the same material as the source and drain contacts for a metal TFT, that can reduce the cost of production of TFTs. It was also observed that the metal TFT has an infinite on-off ratio.en_HK
dc.languageengen_US
dc.relation.ispartofAdvanced Materialsen_HK
dc.titleMetal-insulator-metal transistorsen_HK
dc.typeArticleen_HK
dc.identifier.emailXiang, HF:hfxiang@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/adma.200702525en_HK
dc.identifier.scopuseid_2-s2.0-55049119053en_HK
dc.identifier.hkuros144103-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-55049119053&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2120en_HK
dc.identifier.epage2124en_HK
dc.identifier.isiWOS:000257044600017-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridStallinga, P=6701332987en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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