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Article: Turn-off characteristics of p-n-p-n devices
Title | Turn-off characteristics of p-n-p-n devices |
---|---|
Authors | |
Issue Date | 1967 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
Citation | Solid State Electronics, 1967, v. 10 n. 9, p. 927-933 How to Cite? |
Abstract | The turn-off characteristics of p-n-p-n devices are investigated and a general turn-off criterion is established. It is found that the voltage across center junction of a p-n-p-n device at the onset of turn-off is not zero as assumed by previous investigators, but the junction is forward biased. Experimental results of the gain and junction voltages at turn-off agree closely with those predicted theoretically. © 1967. |
Persistent Identifier | http://hdl.handle.net/10722/155490 |
ISSN | 2023 Impact Factor: 1.4 2023 SCImago Journal Rankings: 0.348 |
DC Field | Value | Language |
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dc.contributor.author | Yang, ES | en_US |
dc.date.accessioned | 2012-08-08T08:33:45Z | - |
dc.date.available | 2012-08-08T08:33:45Z | - |
dc.date.issued | 1967 | en_US |
dc.identifier.citation | Solid State Electronics, 1967, v. 10 n. 9, p. 927-933 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155490 | - |
dc.description.abstract | The turn-off characteristics of p-n-p-n devices are investigated and a general turn-off criterion is established. It is found that the voltage across center junction of a p-n-p-n device at the onset of turn-off is not zero as assumed by previous investigators, but the junction is forward biased. Experimental results of the gain and junction voltages at turn-off agree closely with those predicted theoretically. © 1967. | en_US |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | en_US |
dc.relation.ispartof | Solid State Electronics | en_US |
dc.title | Turn-off characteristics of p-n-p-n devices | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-49949151126 | en_US |
dc.identifier.volume | 10 | en_US |
dc.identifier.issue | 9 | en_US |
dc.identifier.spage | 927 | en_US |
dc.identifier.epage | 933 | en_US |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.issnl | 0038-1101 | - |