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Article: Nonuniform electric field effects on zener tunneling in semiconductors

TitleNonuniform electric field effects on zener tunneling in semiconductors
Authors
Issue Date1974
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcs
Citation
Journal Of Physics And Chemistry Of Solids, 1974, v. 35 n. 3, p. 455-460 How to Cite?
AbstractExpressions for Zener tunneling probability, which are based on a simple two-band theory and a nonuniform electric-field of the profile ε = ε 0e -ax, are calculated explicitly. It is shown that the magnitude of tunneling probability increases as the penetration depth of the electric field decreases. Also numerical example for InSb is discussed. © 1974 Peragamon Press.
Persistent Identifierhttp://hdl.handle.net/10722/155484
ISSN
2015 Impact Factor: 2.048
2015 SCImago Journal Rankings: 0.639

 

DC FieldValueLanguage
dc.contributor.authorYang, Een_US
dc.date.accessioned2012-08-08T08:33:44Z-
dc.date.available2012-08-08T08:33:44Z-
dc.date.issued1974en_US
dc.identifier.citationJournal Of Physics And Chemistry Of Solids, 1974, v. 35 n. 3, p. 455-460en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://hdl.handle.net/10722/155484-
dc.description.abstractExpressions for Zener tunneling probability, which are based on a simple two-band theory and a nonuniform electric-field of the profile ε = ε 0e -ax, are calculated explicitly. It is shown that the magnitude of tunneling probability increases as the penetration depth of the electric field decreases. Also numerical example for InSb is discussed. © 1974 Peragamon Press.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcsen_US
dc.relation.ispartofJournal of Physics and Chemistry of Solidsen_US
dc.titleNonuniform electric field effects on zener tunneling in semiconductorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, E:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, E=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-49549156942en_US
dc.identifier.volume35en_US
dc.identifier.issue3en_US
dc.identifier.spage455en_US
dc.identifier.epage460en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, E=7202021229en_US

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