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- Publisher Website: 10.1109/IMNC.2007.4456126
- Scopus: eid_2-s2.0-47349131216
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Conference Paper: Nanocomposite field effect transistors based on zinc oxide/polymer blends
Title | Nanocomposite field effect transistors based on zinc oxide/polymer blends |
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Authors | |
Issue Date | 2007 |
Citation | Digest Of Papers - Microprocesses And Nanotechnology 2007; 20Th International Microprocesses And Nanotechnology Conference, Mnc, 2007, p. 104-105 How to Cite? |
Abstract | Significant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer. |
Persistent Identifier | http://hdl.handle.net/10722/155480 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roy, VAL | en_HK |
dc.contributor.author | Xu, ZX | en_HK |
dc.contributor.author | Stallinga, P | en_HK |
dc.contributor.author | Xiang, HF | en_HK |
dc.contributor.author | Yan, B | en_HK |
dc.contributor.author | Che, CM | en_HK |
dc.date.accessioned | 2012-08-08T08:33:43Z | - |
dc.date.available | 2012-08-08T08:33:43Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Digest Of Papers - Microprocesses And Nanotechnology 2007; 20Th International Microprocesses And Nanotechnology Conference, Mnc, 2007, p. 104-105 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155480 | - |
dc.description.abstract | Significant progress is being made in the realization of thin-film transistors (TFTs) for application in various electronic devices and circuits [1-5]. Currently, one of the important challenges in this area is to design low-cost and stable organic semiconductors that possess high field-effect mobilities for constructing low-power high-speed transistor devices. However, there are only limited stable and cheap organic semiconductors that are applicable for OTFT applications. Here, we report the work in our laboratory that focus on stable, inexpensive and high field-effect mobility nano-composite materials for the potential application in OTFT technologies. Solution processed polymer based nano-composite field effect transistors with wide band gap semi-conducting ZnO nano-tetrapods and nano-crystals dispersed in the polymer matrix were utilized to study the field effect behaviour. The electrical characteristics of polymer based wide band gap nano-crystal or nano-tetrapod composite devices exhibit an increase in the hole mobility up to two orders of magnitude higher than the pristine polymer. | en_HK |
dc.language | eng | en_US |
dc.relation.ispartof | Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC | en_HK |
dc.title | Nanocomposite field effect transistors based on zinc oxide/polymer blends | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Xiang, HF:hfxiang@eee.hku.hk | en_HK |
dc.identifier.email | Che, CM:cmche@hku.hk | en_HK |
dc.identifier.authority | Xiang, HF=rp00196 | en_HK |
dc.identifier.authority | Che, CM=rp00670 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1109/IMNC.2007.4456126 | en_HK |
dc.identifier.scopus | eid_2-s2.0-47349131216 | en_HK |
dc.identifier.spage | 104 | en_HK |
dc.identifier.epage | 105 | en_HK |
dc.identifier.scopusauthorid | Roy, VAL=7005870324 | en_HK |
dc.identifier.scopusauthorid | Xu, ZX=8726524500 | en_HK |
dc.identifier.scopusauthorid | Stallinga, P=6701332987 | en_HK |
dc.identifier.scopusauthorid | Xiang, HF=23065758900 | en_HK |
dc.identifier.scopusauthorid | Yan, B=7201858607 | en_HK |
dc.identifier.scopusauthorid | Che, CM=7102442791 | en_HK |