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Article: Photo-response of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)

TitlePhoto-response of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)
Authors
KeywordsPhotosensitivity
Phototransistor
Semiconducting Polymer
Thin-Film Transistor
Issue Date2008
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2008, v. 516 n. 12, p. 4295-4300 How to Cite?
AbstractPolymer thin-film transistors (PTFT) and resistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) are fabricated by spin-coating process, and photo-sensing characteristics of the devices are investigated in visible light. Upon illumination, a significant increase in the drain current of the PTFT is observed with a maximum photosensitivity of 198 in the subthreshold operation mode at an illumination intensity of 1200 lux. On the other hand, the photosensitivity of the thin-film resistor is only 18.5 under the same illumination intensity for an applied voltage of 2 V, indicating that there is a photocurrent amplification effect in the PTFT. It is found that the illumination effectively decreases the threshold voltage of the PTFT, but hardly affects its field-effect mobility. The mechanisms for the photocurrent formation in the thin-film resistor and for the photocurrent amplification in the PTFT are discussed. © 2007.
Persistent Identifierhttp://hdl.handle.net/10722/155444
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorPeng, JBen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:33:31Z-
dc.date.available2012-08-08T08:33:31Z-
dc.date.issued2008en_US
dc.identifier.citationThin Solid Films, 2008, v. 516 n. 12, p. 4295-4300en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/155444-
dc.description.abstractPolymer thin-film transistors (PTFT) and resistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) are fabricated by spin-coating process, and photo-sensing characteristics of the devices are investigated in visible light. Upon illumination, a significant increase in the drain current of the PTFT is observed with a maximum photosensitivity of 198 in the subthreshold operation mode at an illumination intensity of 1200 lux. On the other hand, the photosensitivity of the thin-film resistor is only 18.5 under the same illumination intensity for an applied voltage of 2 V, indicating that there is a photocurrent amplification effect in the PTFT. It is found that the illumination effectively decreases the threshold voltage of the PTFT, but hardly affects its field-effect mobility. The mechanisms for the photocurrent formation in the thin-film resistor and for the photocurrent amplification in the PTFT are discussed. © 2007.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectPhotosensitivityen_US
dc.subjectPhototransistoren_US
dc.subjectSemiconducting Polymeren_US
dc.subjectThin-Film Transistoren_US
dc.titlePhoto-response of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2007.11.085en_US
dc.identifier.scopuseid_2-s2.0-40849113282en_US
dc.identifier.hkuros150347-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-40849113282&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume516en_US
dc.identifier.issue12en_US
dc.identifier.spage4295en_US
dc.identifier.epage4300en_US
dc.identifier.isiWOS:000255125900094-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridPeng, JB=7401958759en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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