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Article: Nanostructuring GaN using microsphere lithography

TitleNanostructuring GaN using microsphere lithography
Authors
Issue Date2008
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2008, v. 26 n. 1, p. 76-79 How to Cite?
AbstractThe authors report on the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography. Self-assembled hexagonally packed silica microsphere arrays were formed on GaN wafers by spin coating and tilting. By precision control of process parameters, a monolayer can be formed over a wide region. The silica microspheres act as a hard mask for pattern transfer of the nanostructures. After dry etching, arrays of nanopillars were formed on the surface of the wafer. The ordered nanostructures can be clearly seen in the scanning electron microscopy images, while photoluminescence measurements revealed a twofold enhancement of light emission intensity. © 2008 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/155434
ISSN
2015 Impact Factor: 1.398
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, WNen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:33:28Z-
dc.date.available2012-08-08T08:33:28Z-
dc.date.issued2008en_US
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2008, v. 26 n. 1, p. 76-79en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10722/155434-
dc.description.abstractThe authors report on the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography. Self-assembled hexagonally packed silica microsphere arrays were formed on GaN wafers by spin coating and tilting. By precision control of process parameters, a monolayer can be formed over a wide region. The silica microspheres act as a hard mask for pattern transfer of the nanostructures. After dry etching, arrays of nanopillars were formed on the surface of the wafer. The ordered nanostructures can be clearly seen in the scanning electron microscopy images, while photoluminescence measurements revealed a twofold enhancement of light emission intensity. © 2008 American Vacuum Society.en_US
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/en_US
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.rightsCopyright 2008 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2008, v. 26 n. 1, p. 76-79 and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v26/i1/p76_s1-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleNanostructuring GaN using microsphere lithographyen_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1116/1.2819265en_US
dc.identifier.scopuseid_2-s2.0-38849173878en_US
dc.identifier.hkuros146760-
dc.identifier.hkuros150344-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-38849173878&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume26en_US
dc.identifier.issue1en_US
dc.identifier.spage76en_US
dc.identifier.epage79en_US
dc.identifier.isiWOS:000253399000020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridNg, WN=23486567300en_US
dc.identifier.scopusauthoridLeung, CH=7402612415en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US

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