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Article: Control of the Schottky barrier using an ultrathin interface metal layer

TitleControl of the Schottky barrier using an ultrathin interface metal layer
Authors
Wu, XSchmidt, MTYang, ES
Issue Date1989
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1989, v. 54 n. 3, p. 268-270 How to Cite?
DOI: http://dx.doi.org/10.1063/1.100986
AbstractFermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal-semiconductor interfaces and could be useful in device applications.
Persistent Identifierhttp://hdl.handle.net/10722/155422
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1989R737900027

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:25Z-
dc.date.available2012-08-08T08:33:25Z-
dc.date.issued1989en_US
dc.identifier.citationApplied Physics Letters, 1989, v. 54 n. 3, p. 268-270-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155422-
dc.description.abstractFermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal-semiconductor interfaces and could be useful in device applications.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleControl of the Schottky barrier using an ultrathin interface metal layeren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.100986en_US
dc.identifier.scopuseid_2-s2.0-3743106918en_US
dc.identifier.volume54en_US
dc.identifier.issue3en_US
dc.identifier.spage268en_US
dc.identifier.epage270en_US
dc.identifier.isiWOS:A1989R737900027-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0003-6951-

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