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- Publisher Website: 10.1063/1.91965
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Article: Schottky barrier formation by laser irradiation processing
Title | Schottky barrier formation by laser irradiation processing |
---|---|
Authors | |
Issue Date | 1980 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 1980, v. 37 n. 5, p. 462-463 How to Cite? |
Abstract | A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties. |
Persistent Identifier | http://hdl.handle.net/10722/155420 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, ES | en_US |
dc.contributor.author | Wu, CM | en_US |
dc.contributor.author | Vollmer, HJ | en_US |
dc.contributor.author | Sedgewick, TO | en_US |
dc.contributor.author | Hodgson, RT | en_US |
dc.date.accessioned | 2012-08-08T08:33:24Z | - |
dc.date.available | 2012-08-08T08:33:24Z | - |
dc.date.issued | 1980 | en_US |
dc.identifier.citation | Applied Physics Letters, 1980, v. 37 n. 5, p. 462-463 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155420 | - |
dc.description.abstract | A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Schottky barrier formation by laser irradiation processing | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.91965 | en_US |
dc.identifier.scopus | eid_2-s2.0-36749116234 | en_US |
dc.identifier.volume | 37 | en_US |
dc.identifier.issue | 5 | en_US |
dc.identifier.spage | 462 | en_US |
dc.identifier.epage | 463 | en_US |
dc.identifier.isi | WOS:A1980KH72100012 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.scopusauthorid | Wu, CM=23032716500 | en_US |
dc.identifier.scopusauthorid | Vollmer, HJ=7006741240 | en_US |
dc.identifier.scopusauthorid | Sedgewick, TO=23032602200 | en_US |
dc.identifier.scopusauthorid | Hodgson, RT=7101648256 | en_US |
dc.identifier.issnl | 0003-6951 | - |