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Article: Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique

TitleCharacterization of rapid thermally nitrided SiO2/Si interface by the conductance technique
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1990, v. 57 n. 21, p. 2217-2219 How to Cite?
AbstractDevice quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature.
Persistent Identifierhttp://hdl.handle.net/10722/155406
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:33:19Z-
dc.date.available2012-08-08T08:33:19Z-
dc.date.issued1990en_US
dc.identifier.citationApplied Physics Letters, 1990, v. 57 n. 21, p. 2217-2219en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155406-
dc.description.abstractDevice quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleCharacterization of rapid thermally nitrided SiO2/Si interface by the conductance techniqueen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.104161en_US
dc.identifier.scopuseid_2-s2.0-36549091534en_US
dc.identifier.volume57en_US
dc.identifier.issue21en_US
dc.identifier.spage2217en_US
dc.identifier.epage2219en_US
dc.identifier.isiWOS:A1990EJ52400017-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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