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Article: Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique
Title | Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique |
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Authors | |
Issue Date | 1990 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 1990, v. 57 n. 21, p. 2217-2219 How to Cite? |
Abstract | Device quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature. |
Persistent Identifier | http://hdl.handle.net/10722/155406 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Liu, ZH | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.contributor.author | Cheng, YC | en_US |
dc.date.accessioned | 2012-08-08T08:33:19Z | - |
dc.date.available | 2012-08-08T08:33:19Z | - |
dc.date.issued | 1990 | en_US |
dc.identifier.citation | Applied Physics Letters, 1990, v. 57 n. 21, p. 2217-2219 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155406 | - |
dc.description.abstract | Device quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique | en_US |
dc.type | Article | en_US |
dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.104161 | en_US |
dc.identifier.scopus | eid_2-s2.0-36549091534 | en_US |
dc.identifier.volume | 57 | en_US |
dc.identifier.issue | 21 | en_US |
dc.identifier.spage | 2217 | en_US |
dc.identifier.epage | 2219 | en_US |
dc.identifier.isi | WOS:A1990EJ52400017 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Liu, ZH=7406683158 | en_US |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |
dc.identifier.scopusauthorid | Cheng, YC=27167728600 | en_US |
dc.identifier.issnl | 0003-6951 | - |