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Article: Similarities between the Landau spectra and dispersion relations in Si/Si 1-xGe x quantum wells investigated by magnetotunneling spectroscopy

TitleSimilarities between the Landau spectra and dispersion relations in Si/Si 1-xGe x quantum wells investigated by magnetotunneling spectroscopy
Authors
Gennser, UKesan, VPSyphers, DASmith, TPIyer, SSYang, ES
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1993, v. 63 n. 4, p. 545-547 How to Cite?
DOI: http://dx.doi.org/10.1063/1.110822
AbstractThe current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the presence of strong magnetic fields both parallel and perpendicular to the interfaces revealed new resonances for the latter configuration due to Landau level tunneling. However, there are remarkable similarities between the spectra for the two different magnetic field directions. This can be understood in a semiclassical context, and indicates that the broadening of the Landau levels in Si/Si 1-xGe x hole resonant tunneling diodes is severe.
Persistent Identifierhttp://hdl.handle.net/10722/155404
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1993LP33000040

 

DC FieldValueLanguage
dc.contributor.authorGennser, Uen_US
dc.contributor.authorKesan, VPen_US
dc.contributor.authorSyphers, DAen_US
dc.contributor.authorSmith, TPen_US
dc.contributor.authorIyer, SSen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:19Z-
dc.date.available2012-08-08T08:33:19Z-
dc.date.issued1993en_US
dc.identifier.citationApplied Physics Letters, 1993, v. 63 n. 4, p. 545-547-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155404-
dc.description.abstractThe current-voltage characteristics of Si/Si 1-xGe x hole resonant tunneling structures in the presence of strong magnetic fields both parallel and perpendicular to the interfaces revealed new resonances for the latter configuration due to Landau level tunneling. However, there are remarkable similarities between the spectra for the two different magnetic field directions. This can be understood in a semiclassical context, and indicates that the broadening of the Landau levels in Si/Si 1-xGe x hole resonant tunneling diodes is severe.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleSimilarities between the Landau spectra and dispersion relations in Si/Si 1-xGe x quantum wells investigated by magnetotunneling spectroscopyen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.110822en_US
dc.identifier.scopuseid_2-s2.0-36449006223en_US
dc.identifier.volume63en_US
dc.identifier.issue4en_US
dc.identifier.spage545en_US
dc.identifier.epage547en_US
dc.identifier.isiWOS:A1993LP33000040-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridGennser, U=7003475817en_US
dc.identifier.scopusauthoridKesan, VP=6701760274en_US
dc.identifier.scopusauthoridSyphers, DA=6506182014en_US
dc.identifier.scopusauthoridSmith, TP=7405501049en_US
dc.identifier.scopusauthoridIyer, SS=7202947597en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0003-6951-

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