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Article: Effects of Ge concentration on SiGe oxidation behavior

TitleEffects of Ge concentration on SiGe oxidation behavior
Authors
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1991, v. 59 n. 10, p. 1200-1202 How to Cite?
AbstractThe oxidation of SiGe layers grown by molecular beam epitaxy was studied. Auger depth profile showed that after oxidation, Ge was completely rejected from the oxide and Ge-rich layers were formed. However, the Ge concentration in the SiGe layer was found to play an important role in the formation of these Ge-Rich layers. For SiGe with Ge concentration below 50%, Si was preferentially oxidized and only one Ge-rich layer was formed at the oxide/substrate interface. On the other hand, for SiGe with Ge concentration above 50%, two Ge-rich layers were formed after oxidation with one at the oxide/substrate interface and the other at the oxide surface. X-ray photoelectron spectroscopy studies showed that Ge at the oxide/substrate interface is in elemental form, while Ge at the oxide surface is in an intermediate oxidized state. A classical binary alloy oxidation theory is employed to explain the overall oxidation behavior qualitatively.
Persistent Identifierhttp://hdl.handle.net/10722/155403
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiou, HKen_US
dc.contributor.authorMei, Pen_US
dc.contributor.authorGennser, Uen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:19Z-
dc.date.available2012-08-08T08:33:19Z-
dc.date.issued1991en_US
dc.identifier.citationApplied Physics Letters, 1991, v. 59 n. 10, p. 1200-1202en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155403-
dc.description.abstractThe oxidation of SiGe layers grown by molecular beam epitaxy was studied. Auger depth profile showed that after oxidation, Ge was completely rejected from the oxide and Ge-rich layers were formed. However, the Ge concentration in the SiGe layer was found to play an important role in the formation of these Ge-Rich layers. For SiGe with Ge concentration below 50%, Si was preferentially oxidized and only one Ge-rich layer was formed at the oxide/substrate interface. On the other hand, for SiGe with Ge concentration above 50%, two Ge-rich layers were formed after oxidation with one at the oxide/substrate interface and the other at the oxide surface. X-ray photoelectron spectroscopy studies showed that Ge at the oxide/substrate interface is in elemental form, while Ge at the oxide surface is in an intermediate oxidized state. A classical binary alloy oxidation theory is employed to explain the overall oxidation behavior qualitatively.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleEffects of Ge concentration on SiGe oxidation behavioren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.105502en_US
dc.identifier.scopuseid_2-s2.0-36449005261en_US
dc.identifier.volume59en_US
dc.identifier.issue10en_US
dc.identifier.spage1200en_US
dc.identifier.epage1202en_US
dc.identifier.isiWOS:A1991GC95800021-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiou, HK=7102330018en_US
dc.identifier.scopusauthoridMei, P=36876516400en_US
dc.identifier.scopusauthoridGennser, U=7003475817en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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