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Article: Electroreflectance in a nonuniform field in the small-wave-number approximation and its measurement by ellipsometry

TitleElectroreflectance in a nonuniform field in the small-wave-number approximation and its measurement by ellipsometry
Authors
Issue Date1972
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B, 1972, v. 5 n. 6, p. 2242-2250 How to Cite?
AbstractThe changes in the real and imaginary parts of the dielectric constant of a solid induced by an electric field which decreases exponentially with distance from the surface are calculated from perturbation theory for photon energies near interband transitions. This exponential model for the field is of interest because it approximates well the actual field over a fairly wide range of surface conditions and because it contains only two adjustable parameters, the surface field and the rate of decay of the exponential. The contribution from each of these parameters can be separated and identified in the results. Previous calculations of electro-reflectance in a nonuniform field have employed the one-electron Franz-Keldysh theory for a uniform field, assuming the field to vary slowly enough with distance from the surface so that a WKB approximation could be used to extract spatially averaged values of the change in dielectric constant. Our calculation is not limited by the WKB approximation, and is applicable even at very large field nonuniformities. However, when the field penetration depth is less than about three times the photon penetration depth, effective masses must be known in order to complete our calculation, but it is still valid. The theory, used to interpret a modulated-ellipsometry experiment on Ge in the 2.1-eV region, shows that illumination of the sample surface by a second light beam can decrease the field penetration depth by at least a factor of 20, and increase the surface field by at least a factor of 10, because of increased free-carrier screening. © 1972 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/155397
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Een_US
dc.contributor.authorBuckman, ABen_US
dc.date.accessioned2012-08-08T08:33:17Z-
dc.date.available2012-08-08T08:33:17Z-
dc.date.issued1972en_US
dc.identifier.citationPhysical Review B, 1972, v. 5 n. 6, p. 2242-2250en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://hdl.handle.net/10722/155397-
dc.description.abstractThe changes in the real and imaginary parts of the dielectric constant of a solid induced by an electric field which decreases exponentially with distance from the surface are calculated from perturbation theory for photon energies near interband transitions. This exponential model for the field is of interest because it approximates well the actual field over a fairly wide range of surface conditions and because it contains only two adjustable parameters, the surface field and the rate of decay of the exponential. The contribution from each of these parameters can be separated and identified in the results. Previous calculations of electro-reflectance in a nonuniform field have employed the one-electron Franz-Keldysh theory for a uniform field, assuming the field to vary slowly enough with distance from the surface so that a WKB approximation could be used to extract spatially averaged values of the change in dielectric constant. Our calculation is not limited by the WKB approximation, and is applicable even at very large field nonuniformities. However, when the field penetration depth is less than about three times the photon penetration depth, effective masses must be known in order to complete our calculation, but it is still valid. The theory, used to interpret a modulated-ellipsometry experiment on Ge in the 2.1-eV region, shows that illumination of the sample surface by a second light beam can decrease the field penetration depth by at least a factor of 20, and increase the surface field by at least a factor of 10, because of increased free-carrier screening. © 1972 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review Ben_US
dc.titleElectroreflectance in a nonuniform field in the small-wave-number approximation and its measurement by ellipsometryen_US
dc.typeArticleen_US
dc.identifier.emailYang, E:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, E=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevB.5.2242en_US
dc.identifier.scopuseid_2-s2.0-35949042407en_US
dc.identifier.volume5en_US
dc.identifier.issue6en_US
dc.identifier.spage2242en_US
dc.identifier.epage2250en_US
dc.identifier.isiWOS:A1972M074400027-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, E=7202021229en_US
dc.identifier.scopusauthoridBuckman, AB=7004017338en_US

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