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Article: Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

TitleStability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)
Authors
KeywordsField-Effect Mobility
Semiconducting Polymer
Stability
Thin-Film Transistor
Issue Date2007
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2007, v. 253 n. 17, p. 6987-6991 How to Cite?
AbstractPolymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO2 gate dielectric near the SiO2/MEH-PPV interface due to hot-carrier emission. © 2007.
Persistent Identifierhttp://hdl.handle.net/10722/155373
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorPeng, JBen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:33:07Z-
dc.date.available2012-08-08T08:33:07Z-
dc.date.issued2007en_US
dc.identifier.citationApplied Surface Science, 2007, v. 253 n. 17, p. 6987-6991en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://hdl.handle.net/10722/155373-
dc.description.abstractPolymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO2 gate dielectric near the SiO2/MEH-PPV interface due to hot-carrier emission. © 2007.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.subjectField-Effect Mobilityen_US
dc.subjectSemiconducting Polymeren_US
dc.subjectStabilityen_US
dc.subjectThin-Film Transistoren_US
dc.titleStability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)en_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.apsusc.2007.01.136en_US
dc.identifier.scopuseid_2-s2.0-34249068013en_US
dc.identifier.hkuros150284-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249068013&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume253en_US
dc.identifier.issue17en_US
dc.identifier.spage6987en_US
dc.identifier.epage6991en_US
dc.identifier.isiWOS:000247867700001-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridPeng, JB=7401958759en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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