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Article: Modelling the threshold-voltage shift of polymer thin-film transistors under constant and variable gate-bias stresses

TitleModelling the threshold-voltage shift of polymer thin-film transistors under constant and variable gate-bias stresses
Authors
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2007, v. 22 n. 3, p. 259-262 How to Cite?
AbstractPolymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl- hexyloxy)-1,4-phenylene vinylene) semiconductors are fabricated by a spin-coating process and characterized. The effects of gate-bias stress on the devices at room temperature are studied. Upon the gate-bias stress, the saturation current decreases; threshold voltage shifts toward the negative direction, but carrier mobility remains essentially constant. Quasi-static capacitance-voltage analysis on a metal-oxide-semiconductor capacitor structure is used to clarify the physical mechanism of the threshold-voltage shift. A model for the threshold-voltage shift under constant and variable gate-bias stresses is proposed and shows good agreement with experimental data. © 2007 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155369
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorPeng, Jen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:33:06Z-
dc.date.available2012-08-08T08:33:06Z-
dc.date.issued2007en_US
dc.identifier.citationSemiconductor Science And Technology, 2007, v. 22 n. 3, p. 259-262en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/155369-
dc.description.abstractPolymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl- hexyloxy)-1,4-phenylene vinylene) semiconductors are fabricated by a spin-coating process and characterized. The effects of gate-bias stress on the devices at room temperature are studied. Upon the gate-bias stress, the saturation current decreases; threshold voltage shifts toward the negative direction, but carrier mobility remains essentially constant. Quasi-static capacitance-voltage analysis on a metal-oxide-semiconductor capacitor structure is used to clarify the physical mechanism of the threshold-voltage shift. A model for the threshold-voltage shift under constant and variable gate-bias stresses is proposed and shows good agreement with experimental data. © 2007 IOP Publishing Ltd.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleModelling the threshold-voltage shift of polymer thin-film transistors under constant and variable gate-bias stressesen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/22/3/015en_US
dc.identifier.scopuseid_2-s2.0-34247240580en_US
dc.identifier.hkuros135373-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34247240580&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume22en_US
dc.identifier.issue3en_US
dc.identifier.spage259en_US
dc.identifier.epage262en_US
dc.identifier.isiWOS:000244875600015-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLiu, Y=36062331200en_US
dc.identifier.scopusauthoridPeng, J=7401958759en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.citeulike1086732-

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