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Article: Improved carrier mobility for pentacene TFT by NH 3 annealing of gate dielectric

TitleImproved carrier mobility for pentacene TFT by NH 3 annealing of gate dielectric
Authors
Kwan, MCCheng, KHLai, PTChe, CM
KeywordsAmmonia annealing
Mobility
OTFT
Pentacene
Issue Date2007
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2007, v. 51 n. 1, p. 77-80 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sse.2006.11.005
AbstractThe carrier mobility of pentacene OTFT is enhanced by annealing its gate dielectric (SiO 2) in NH 3. The device has a field-effect mobility of 0.53 cm 2/V s, with on/off current ratio of 10 6, and subthreshold slope of 2.4 V per decade. When compared with the control sample with N 2-annealed SiO 2 as gate dielectric, the mobility of the proposed pentacene OTFT is increased by over 50%. AFM micrographs show that the higher mobility should be due to the smoother gate-dielectric surface passivated by the NH 3 annealing, and also larger pentacene grains grown on the smoother gate-dielectric surface. © 2006 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155352
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:000247900700009
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorKwan, MCen_HK
dc.contributor.authorCheng, KHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-08-08T08:33:02Z-
dc.date.available2012-08-08T08:33:02Z-
dc.date.issued2007en_HK
dc.identifier.citationSolid-State Electronics, 2007, v. 51 n. 1, p. 77-80en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155352-
dc.description.abstractThe carrier mobility of pentacene OTFT is enhanced by annealing its gate dielectric (SiO 2) in NH 3. The device has a field-effect mobility of 0.53 cm 2/V s, with on/off current ratio of 10 6, and subthreshold slope of 2.4 V per decade. When compared with the control sample with N 2-annealed SiO 2 as gate dielectric, the mobility of the proposed pentacene OTFT is increased by over 50%. AFM micrographs show that the higher mobility should be due to the smoother gate-dielectric surface passivated by the NH 3 annealing, and also larger pentacene grains grown on the smoother gate-dielectric surface. © 2006 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectAmmonia annealingen_HK
dc.subjectMobilityen_HK
dc.subjectOTFTen_HK
dc.subjectPentaceneen_HK
dc.titleImproved carrier mobility for pentacene TFT by NH 3 annealing of gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sse.2006.11.005en_HK
dc.identifier.scopuseid_2-s2.0-84876290435en_HK
dc.identifier.hkuros135371-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846586960&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume51en_HK
dc.identifier.issue1en_HK
dc.identifier.spage77en_HK
dc.identifier.epage80en_HK
dc.identifier.isiWOS:000247900700009-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridKwan, MC=8301739500en_HK
dc.identifier.scopusauthoridCheng, KH=7402997820en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.issnl0038-1101-

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