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Article: Influence of oxidation and annealing temperatures on quality of Ga 2O 3 film grown on GaN

TitleInfluence of oxidation and annealing temperatures on quality of Ga 2O 3 film grown on GaN
Authors
KeywordsElectrical Measurements And Properties
Gallium Nitride
Interface States
Oxidation
Issue Date2006
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2006, v. 515 n. 4, p. 2111-2115 How to Cite?
AbstractThe effects of oxidation and annealing temperatures on thermally oxidized GaN were investigated. GaN wafers were oxidized at 750 °C, 800 °C and 850 °C, respectively, and the electrical characteristics and interface quality of the resulting metal-oxide-semiconductor capacitors were compared. Among the three samples, the sample oxidized at 800 °C presented the best current-voltage characteristics, capacitance-voltage characteristics in accumulation region and smoothest surface morphology because of better thermal stability and quality of oxide grown at this temperature. Moreover, its electrical breakdown field was higher than the other two orders of magnitude. However, if the sample was annealed at a higher temperature of 850 °C, the quality of its oxide was significantly degraded due to the sharply increasing decomposition of both oxide and GaN at higher temperature. Lastly, the higher oxidation temperature of 850 °C gave the best interface quality. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155346
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, LMen_US
dc.contributor.authorLuo, Yen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLau, KMen_US
dc.date.accessioned2012-08-08T08:33:00Z-
dc.date.available2012-08-08T08:33:00Z-
dc.date.issued2006en_US
dc.identifier.citationThin Solid Films, 2006, v. 515 n. 4, p. 2111-2115en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/155346-
dc.description.abstractThe effects of oxidation and annealing temperatures on thermally oxidized GaN were investigated. GaN wafers were oxidized at 750 °C, 800 °C and 850 °C, respectively, and the electrical characteristics and interface quality of the resulting metal-oxide-semiconductor capacitors were compared. Among the three samples, the sample oxidized at 800 °C presented the best current-voltage characteristics, capacitance-voltage characteristics in accumulation region and smoothest surface morphology because of better thermal stability and quality of oxide grown at this temperature. Moreover, its electrical breakdown field was higher than the other two orders of magnitude. However, if the sample was annealed at a higher temperature of 850 °C, the quality of its oxide was significantly degraded due to the sharply increasing decomposition of both oxide and GaN at higher temperature. Lastly, the higher oxidation temperature of 850 °C gave the best interface quality. © 2006 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectElectrical Measurements And Propertiesen_US
dc.subjectGallium Nitrideen_US
dc.subjectInterface Statesen_US
dc.subjectOxidationen_US
dc.titleInfluence of oxidation and annealing temperatures on quality of Ga 2O 3 film grown on GaNen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2006.07.036en_US
dc.identifier.scopuseid_2-s2.0-33750820446en_US
dc.identifier.hkuros135368-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33750820446&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume515en_US
dc.identifier.issue4en_US
dc.identifier.spage2111en_US
dc.identifier.epage2115en_US
dc.identifier.isiWOS:000242931900141-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLin, LM=8642604900en_US
dc.identifier.scopusauthoridLuo, Y=54680940500en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLau, KM=7401559968en_US

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