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Article: Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection

TitleInfluence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection
Authors
Issue Date2006
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2006, v. 46 n. 12, p. 2044-2048 How to Cite?
AbstractThe effects of trichloroethylene (TCE) concentration in SiC thermal oxidation on the reliability of MOS capacitors under Fowler-Nordheim (FN) electron injection have been investigated. It is found that TCE thermal oxidation can enhance the resistance of the SiO2/SiC interface against generation of interface states and oxide charges caused by FN electron injection, and the resistance increases with TCE ratio increasing from 0 to 0.1. As compared with the control sample based on dry-O2 oxidation, the interface-state generation at 0.25 eV below the conduction-band edge is 5, 23, and 170 times smaller for samples with TCE ratio of 0.01, 0.05 and 0.1 respectively. In addition, the interface traps and oxide-charge traps of fresh samples decrease with increasing TCE ratio for the ratio less than 0.01, and then increase for larger ratio. It is proposed that the enhanced resistance against the stress is attributed to the gettering or dislodging of electrical and physical defects by the chlorine atoms incorporated in the oxide during the TCE oxidation. © 2006.
Persistent Identifierhttp://hdl.handle.net/10722/155342
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_US
dc.contributor.authorKwok, PCKen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:32:59Z-
dc.date.available2012-08-08T08:32:59Z-
dc.date.issued2006en_US
dc.identifier.citationMicroelectronics Reliability, 2006, v. 46 n. 12, p. 2044-2048en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/10722/155342-
dc.description.abstractThe effects of trichloroethylene (TCE) concentration in SiC thermal oxidation on the reliability of MOS capacitors under Fowler-Nordheim (FN) electron injection have been investigated. It is found that TCE thermal oxidation can enhance the resistance of the SiO2/SiC interface against generation of interface states and oxide charges caused by FN electron injection, and the resistance increases with TCE ratio increasing from 0 to 0.1. As compared with the control sample based on dry-O2 oxidation, the interface-state generation at 0.25 eV below the conduction-band edge is 5, 23, and 170 times smaller for samples with TCE ratio of 0.01, 0.05 and 0.1 respectively. In addition, the interface traps and oxide-charge traps of fresh samples decrease with increasing TCE ratio for the ratio less than 0.01, and then increase for larger ratio. It is proposed that the enhanced resistance against the stress is attributed to the gettering or dislodging of electrical and physical defects by the chlorine atoms incorporated in the oxide during the TCE oxidation. © 2006.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_US
dc.relation.ispartofMicroelectronics Reliabilityen_US
dc.titleInfluence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injectionen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.microrel.2005.12.007en_US
dc.identifier.scopuseid_2-s2.0-33748923961en_US
dc.identifier.hkuros135362-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33748923961&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume46en_US
dc.identifier.issue12en_US
dc.identifier.spage2044en_US
dc.identifier.epage2048en_US
dc.identifier.isiWOS:000241465400008-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, BL=24777588400en_US
dc.identifier.scopusauthoridKwok, PCK=7101871278en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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