File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Tapered sidewall dry etching process for GaN and its applications in device fabrication

TitleTapered sidewall dry etching process for GaN and its applications in device fabrication
Authors
Issue Date2005
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, v. 23 n. 1, p. 99-102 How to Cite?
AbstractA method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The degree of inclination can be readily controlled through various etching parameters, which include the inductively coupled plasma power, plate power, and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnected and matrix-addressable microlight-emitting diodes, and offers superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes. © 2005 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/155311
ISSN
2015 Impact Factor: 1.398
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorJeon, CWen_US
dc.contributor.authorDawson, MDen_US
dc.date.accessioned2012-08-08T08:32:49Z-
dc.date.available2012-08-08T08:32:49Z-
dc.date.issued2005en_US
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, v. 23 n. 1, p. 99-102en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10722/155311-
dc.description.abstractA method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The degree of inclination can be readily controlled through various etching parameters, which include the inductively coupled plasma power, plate power, and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnected and matrix-addressable microlight-emitting diodes, and offers superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes. © 2005 American Vacuum Society.en_US
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/en_US
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.rightsCopyright 2005 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, v. 23 n. 1, p. 99-102 and may be found at http://avspublications.org/jvstb/resource/1/jvtbd9/v23/i1/p99_s1-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleTapered sidewall dry etching process for GaN and its applications in device fabricationen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1116/1.1839914en_US
dc.identifier.scopuseid_2-s2.0-31144465964en_US
dc.identifier.hkuros102788-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31144465964&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume23en_US
dc.identifier.issue1en_US
dc.identifier.spage99en_US
dc.identifier.epage102en_US
dc.identifier.isiWOS:000227300900019-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats