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Article: Sensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate

TitleSensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate
Authors
Issue Date2001
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2001, v. 655, p. XCX-XCXI How to Cite?
AbstractBarium lanthanum titanate-niobate (Ba1-xLaxNbyTi1-yO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 28-400°C, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated. © 2001 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/155285
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorZeng, SHen_US
dc.contributor.authorHuang, MQen_US
dc.date.accessioned2012-08-08T08:32:42Z-
dc.date.available2012-08-08T08:32:42Z-
dc.date.issued2001en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2001, v. 655, p. XCX-XCXIen_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/155285-
dc.description.abstractBarium lanthanum titanate-niobate (Ba1-xLaxNbyTi1-yO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 28-400°C, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated. © 2001 Materials Research Society.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleSensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrateen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-24144500345en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-24144500345&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume655en_US
dc.identifier.spageXCXen_US
dc.identifier.epageXCXIen_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridZeng, SH=7202412592en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US

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