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Article: Effects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

TitleEffects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits
Authors
KeywordsAnnealing
Bst Thin-Film
Tunability
Tunable Capacitor
Issue Date2005
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/matchemphys
Citation
Materials Chemistry And Physics, 2005, v. 94 n. 1, p. 114-118 How to Cite?
AbstractBarium strontium titanate (BST) thin-films deposited on a SiO 2/Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 °C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 °C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155283
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.733
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorPeng, JBen_US
dc.contributor.authorLo, HBen_US
dc.date.accessioned2012-08-08T08:32:42Z-
dc.date.available2012-08-08T08:32:42Z-
dc.date.issued2005en_US
dc.identifier.citationMaterials Chemistry And Physics, 2005, v. 94 n. 1, p. 114-118en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://hdl.handle.net/10722/155283-
dc.description.abstractBarium strontium titanate (BST) thin-films deposited on a SiO 2/Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 °C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 °C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface. © 2005 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/matchemphysen_US
dc.relation.ispartofMaterials Chemistry and Physicsen_US
dc.subjectAnnealingen_US
dc.subjectBst Thin-Filmen_US
dc.subjectTunabilityen_US
dc.subjectTunable Capacitoren_US
dc.titleEffects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuitsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.matchemphys.2005.04.034en_US
dc.identifier.scopuseid_2-s2.0-23844528135en_US
dc.identifier.hkuros107274-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-23844528135&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume94en_US
dc.identifier.issue1en_US
dc.identifier.spage114en_US
dc.identifier.epage118en_US
dc.identifier.isiWOS:000231592300019-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridPeng, JB=7401958759en_US
dc.identifier.scopusauthoridLo, HB=7202085394en_US

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