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Article: InGaP/GaAs HBT power amplifier with CMRC structure

TitleInGaP/GaAs HBT power amplifier with CMRC structure
Authors
Poek, CKYan, BPYang, ES
KeywordsAclr
Compact Microstrip Resonant Cell (Cmrc)
Hbt Power Amplifier
Pae
Issue Date2005
PublisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176
Citation
Microwave And Optical Technology Letters, 2005, v. 46 n. 1, p. 84-88 How to Cite?
DOI: http://dx.doi.org/10.1002/mop.20908
AbstractAn InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band-1-power class-2 application. The HBT power amplifier demonstrates maximum output power P out of 29.4 dBm and power-added efficiency (PAE) of 48% at a frequency of 1.95 GHz. When operated according to the WCDMA standard, it achieves Pout of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IMS performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. © 2005 Wiley Periodicals, Inc.
Persistent Identifierhttp://hdl.handle.net/10722/155278
ISSN
0895-2477
2023 Impact Factor: 1.0
2023 SCImago Journal Rankings: 0.376
ISI Accession Number ID
WOS:000229466800026
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorPoek, CKen_US
dc.contributor.authorYan, BPen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:40Z-
dc.date.available2012-08-08T08:32:40Z-
dc.date.issued2005en_US
dc.identifier.citationMicrowave And Optical Technology Letters, 2005, v. 46 n. 1, p. 84-88en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://hdl.handle.net/10722/155278-
dc.description.abstractAn InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band-1-power class-2 application. The HBT power amplifier demonstrates maximum output power P out of 29.4 dBm and power-added efficiency (PAE) of 48% at a frequency of 1.95 GHz. When operated according to the WCDMA standard, it achieves Pout of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IMS performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. © 2005 Wiley Periodicals, Inc.en_US
dc.languageengen_US
dc.publisherJohn Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/37176en_US
dc.relation.ispartofMicrowave and Optical Technology Lettersen_US
dc.subjectAclren_US
dc.subjectCompact Microstrip Resonant Cell (Cmrc)en_US
dc.subjectHbt Power Amplifieren_US
dc.subjectPaeen_US
dc.titleInGaP/GaAs HBT power amplifier with CMRC structureen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/mop.20908en_US
dc.identifier.scopuseid_2-s2.0-21944455177en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21944455177&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume46en_US
dc.identifier.issue1en_US
dc.identifier.spage84en_US
dc.identifier.epage88en_US
dc.identifier.isiWOS:000229466800026-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPoek, CK=8561880100en_US
dc.identifier.scopusauthoridYan, BP=7201858607en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0895-2477-

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