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Article: Structural study of tin and carbon coimplanted silicon

TitleStructural study of tin and carbon coimplanted silicon
Authors
Mei, PSchmidt, MTYang, ESWilkens, BJ
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1991, v. 69 n. 12, p. 8417-8419 How to Cite?
DOI: http://dx.doi.org/10.1063/1.347410
AbstractThe alloy system Si x(Sn yC 1-y) 1-x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 10 15-10 16 cm -2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
Persistent Identifierhttp://hdl.handle.net/10722/155277
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1991FU81200076

 

DC FieldValueLanguage
dc.contributor.authorMei, Pen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorWilkens, BJen_US
dc.date.accessioned2012-08-08T08:32:40Z-
dc.date.available2012-08-08T08:32:40Z-
dc.date.issued1991en_US
dc.identifier.citationJournal of Applied Physics, 1991, v. 69 n. 12, p. 8417-8419-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155277-
dc.description.abstractThe alloy system Si x(Sn yC 1-y) 1-x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 10 15-10 16 cm -2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleStructural study of tin and carbon coimplanted siliconen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.347410en_US
dc.identifier.scopuseid_2-s2.0-21544478405en_US
dc.identifier.volume69en_US
dc.identifier.issue12en_US
dc.identifier.spage8417en_US
dc.identifier.epage8419en_US
dc.identifier.isiWOS:A1991FU81200076-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMei, P=36876516400en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWilkens, BJ=22969621100en_US
dc.identifier.issnl0021-8979-

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