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Article: Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC

TitleEffects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC
Authors
KeywordsFlat-Band Voltage
Interface-State Density
Oxide-Charge Density
Silicon Carbide
Tce Oxidation
Issue Date2005
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2005, v. 49 n. 7, p. 1223-1227 How to Cite?
AbstractThe effects of trichloroethylene (TCE) concentration on the thermal oxidation of SiC are studied in terms of the oxide quality and the properties of the SiO2/SiC interface. It is found for the first time that as TCE concentration increases, the flat-band voltage, oxide-charge density and interface-state density all exhibit a turnaround behavior. For TCE ratio (flow rate of N2 + TCE to flow rate of O2) less than 0.01, the flat-band voltage increases with TCE concentration while the oxide-charge and interface-state densities decrease. However, for TCE ratio larger than 0.05, opposites occur with the flat-band voltage decreasing and the two densities increasing. The TCE-induced reductions of the oxide charges and interface states at 0.1-0.5 eV below the conduction-band edge are 93% and 24-99%, respectively, for a TCE ratio of 0.05. Moreover, as TCE ratio increases from 0 to 0.2, the oxide resistance against stress-induced damage increases. In summary, the TCE oxidation with appropriate TCE concentration can reduce the oxide charges and improve the interface properties and oxide reliability. © 2005 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155275
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_US
dc.contributor.authorLin, LMen_US
dc.contributor.authorLo, HBen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:32:40Z-
dc.date.available2012-08-08T08:32:40Z-
dc.date.issued2005en_US
dc.identifier.citationSolid-State Electronics, 2005, v. 49 n. 7, p. 1223-1227en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155275-
dc.description.abstractThe effects of trichloroethylene (TCE) concentration on the thermal oxidation of SiC are studied in terms of the oxide quality and the properties of the SiO2/SiC interface. It is found for the first time that as TCE concentration increases, the flat-band voltage, oxide-charge density and interface-state density all exhibit a turnaround behavior. For TCE ratio (flow rate of N2 + TCE to flow rate of O2) less than 0.01, the flat-band voltage increases with TCE concentration while the oxide-charge and interface-state densities decrease. However, for TCE ratio larger than 0.05, opposites occur with the flat-band voltage decreasing and the two densities increasing. The TCE-induced reductions of the oxide charges and interface states at 0.1-0.5 eV below the conduction-band edge are 93% and 24-99%, respectively, for a TCE ratio of 0.05. Moreover, as TCE ratio increases from 0 to 0.2, the oxide resistance against stress-induced damage increases. In summary, the TCE oxidation with appropriate TCE concentration can reduce the oxide charges and improve the interface properties and oxide reliability. © 2005 Elsevier Ltd. All rights reserved.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.subjectFlat-Band Voltageen_US
dc.subjectInterface-State Densityen_US
dc.subjectOxide-Charge Densityen_US
dc.subjectSilicon Carbideen_US
dc.subjectTce Oxidationen_US
dc.titleEffects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiCen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sse.2005.05.010en_US
dc.identifier.scopuseid_2-s2.0-21444438448en_US
dc.identifier.hkuros107288-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21444438448&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume49en_US
dc.identifier.issue7en_US
dc.identifier.spage1223en_US
dc.identifier.epage1227en_US
dc.identifier.isiWOS:000230709100026-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, BL=24777588400en_US
dc.identifier.scopusauthoridLin, LM=8642604900en_US
dc.identifier.scopusauthoridLo, HB=7202085394en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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