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Article: Surface Modification and Ohmic Contact Formation to n and p-Type GaN

TitleSurface Modification and Ohmic Contact Formation to n and p-Type GaN
Authors
Issue Date2001
Citation
Physica Status Solidi (A) Applied Research, 2001, v. 188 n. 1, p. 399-402 How to Cite?
AbstractSurface modification of n and p-type GaN using Cl2/N2 and pure N2 plasmas was investigated. It was found that the surface conductivity of n-GaN was reduced when N2 was introduced, as N2 loss was prevented. However, the restoration of stoichiometry improved the resistivity of Ohmic contacts, as N2 was necessary for the formation of TiN. In contrast, N2 plasma exposure was beneficial to improvements of surface conductivities in p-GaN. Contacts deposited on Cl2/N2 etched surfaces exhibit excellent Ohmic characteristics.
Persistent Identifierhttp://hdl.handle.net/10722/155270
ISSN
2007 Impact Factor: 1.214
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorKang, XJen_US
dc.date.accessioned2012-08-08T08:32:37Z-
dc.date.available2012-08-08T08:32:37Z-
dc.date.issued2001en_US
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 2001, v. 188 n. 1, p. 399-402en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://hdl.handle.net/10722/155270-
dc.description.abstractSurface modification of n and p-type GaN using Cl2/N2 and pure N2 plasmas was investigated. It was found that the surface conductivity of n-GaN was reduced when N2 was introduced, as N2 loss was prevented. However, the restoration of stoichiometry improved the resistivity of Ohmic contacts, as N2 was necessary for the formation of TiN. In contrast, N2 plasma exposure was beneficial to improvements of surface conductivities in p-GaN. Contacts deposited on Cl2/N2 etched surfaces exhibit excellent Ohmic characteristics.en_US
dc.languageengen_US
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_US
dc.titleSurface Modification and Ohmic Contact Formation to n and p-Type GaNen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/1521-396X(200111)188:1<399::AID-PSSA399>3.0.CO;2-Men_US
dc.identifier.scopuseid_2-s2.0-1942510671en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1942510671&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume188en_US
dc.identifier.issue1en_US
dc.identifier.spage399en_US
dc.identifier.epage402en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridKang, XJ=36868928100en_US

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