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Article: Morphological and structural analyses of plasma-induced damage to n-type GaN

TitleMorphological and structural analyses of plasma-induced damage to n-type GaN
Authors
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2002, v. 92 n. 8, p. 4381-4385 How to Cite?
AbstractPlasma-induced damage to n-type GaN has been studied by atomic force microscopy and Raman spectroscopy. It was found that the extent of surface roughening is largely dependent on the surface defect density, since preferential sputtering at these sites takes place. Several Raman defect modes have emerged from the plasma-damaged samples, and have been compared to the defect modes observed from ion-implanted GaN. The defect peaks centered at 300 and 360cm -1 have been assigned to disorder-activated Raman scattering modes, while the 453 and 639cm -1 peaks have been attributed to vacancy scattering. It has also been demonstrated that structural damage can be annealed out at 900 °C for 60 s in flowing N 2. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155266
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorTripathy, Sen_US
dc.date.accessioned2012-08-08T08:32:36Z-
dc.date.available2012-08-08T08:32:36Z-
dc.date.issued2002en_US
dc.identifier.citationJournal Of Applied Physics, 2002, v. 92 n. 8, p. 4381-4385en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155266-
dc.description.abstractPlasma-induced damage to n-type GaN has been studied by atomic force microscopy and Raman spectroscopy. It was found that the extent of surface roughening is largely dependent on the surface defect density, since preferential sputtering at these sites takes place. Several Raman defect modes have emerged from the plasma-damaged samples, and have been compared to the defect modes observed from ion-implanted GaN. The defect peaks centered at 300 and 360cm -1 have been assigned to disorder-activated Raman scattering modes, while the 453 and 639cm -1 peaks have been attributed to vacancy scattering. It has also been demonstrated that structural damage can be annealed out at 900 °C for 60 s in flowing N 2. © 2002 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleMorphological and structural analyses of plasma-induced damage to n-type GaNen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1509844en_US
dc.identifier.scopuseid_2-s2.0-18744361845en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18744361845&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume92en_US
dc.identifier.issue8en_US
dc.identifier.spage4381en_US
dc.identifier.epage4385en_US
dc.identifier.isiWOS:000178318000031-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridTripathy, S=8698106400en_US

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