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Article: Interfacial properties and reliability of SiO 2 grown on 6H-SiC in dry O 2 plus trichloroethylene

TitleInterfacial properties and reliability of SiO 2 grown on 6H-SiC in dry O 2 plus trichloroethylene
Authors
Issue Date2004
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2004, v. 44 n. 4, p. 577-580 How to Cite?
AbstractA new process of growing SiO 2 on n- and p-type 6H-SiC wafers in dry O 2+trichloroethylene (TCE) was investigated. The interface quality and reliability of 6H-SiC metal-oxide-semiconductor (MOS) capacitors with gate dielectrics prepared by the process were examined. As compared to conventional dry O 2 oxidation, the O 2 + TCE oxidation resulted in lower interface-state, border-trap and oxide-charge densities, and enhanced reliability. This could be attributed to the passivation effect of Cl 2 or HCl on structural defects at/near the SiC/SiO 2 interface, and the gettering effect of Cl 2 or HCl on ion contamination. In addition, increased oxidation rate was observed in the O 2 + TCE ambient, and can be used to reduce the normally-high thermal budget for oxide growth. All these are very attractive for fabricating SiC MOS field-effect transistors (MOSFETs) with high inversion-channel mobility and high hot-carrier reliability. © 2004 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155260
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorWu, HPen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2012-08-08T08:32:35Z-
dc.date.available2012-08-08T08:32:35Z-
dc.date.issued2004en_HK
dc.identifier.citationMicroelectronics Reliability, 2004, v. 44 n. 4, p. 577-580en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155260-
dc.description.abstractA new process of growing SiO 2 on n- and p-type 6H-SiC wafers in dry O 2+trichloroethylene (TCE) was investigated. The interface quality and reliability of 6H-SiC metal-oxide-semiconductor (MOS) capacitors with gate dielectrics prepared by the process were examined. As compared to conventional dry O 2 oxidation, the O 2 + TCE oxidation resulted in lower interface-state, border-trap and oxide-charge densities, and enhanced reliability. This could be attributed to the passivation effect of Cl 2 or HCl on structural defects at/near the SiC/SiO 2 interface, and the gettering effect of Cl 2 or HCl on ion contamination. In addition, increased oxidation rate was observed in the O 2 + TCE ambient, and can be used to reduce the normally-high thermal budget for oxide growth. All these are very attractive for fabricating SiC MOS field-effect transistors (MOSFETs) with high inversion-channel mobility and high hot-carrier reliability. © 2004 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleInterfacial properties and reliability of SiO 2 grown on 6H-SiC in dry O 2 plus trichloroethyleneen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.microrel.2004.01.009en_HK
dc.identifier.scopuseid_2-s2.0-1642290095en_HK
dc.identifier.hkuros90674-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1642290095&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume44en_HK
dc.identifier.issue4en_HK
dc.identifier.spage577en_HK
dc.identifier.epage580en_HK
dc.identifier.isiWOS:000220536200003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridWu, HP=8912385200en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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