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Article: High extraction efficiency InGaN micro-ring light-emitting diodes

TitleHigh extraction efficiency InGaN micro-ring light-emitting diodes
Authors
Choi, HWDawson, MDEdwards, PRMartin, RW
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 22, p. 4483-4485 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1630352
AbstractAn InGaN micro-LED array with a micro-ring geometry was demonstrated. The device has similar electrical characteristics to a conventional BA LED. However, due to its large surface-area to light-emission-area ratio, the extraction efficiency of the structure is enhanced. From the light output measurements, a 100% increase in light emission was recorded over a conventional broad area LED of equivalent emitter area.
Persistent Identifierhttp://hdl.handle.net/10722/155235
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000186787100005
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorDawson, MDen_US
dc.contributor.authorEdwards, PRen_US
dc.contributor.authorMartin, RWen_US
dc.date.accessioned2012-08-08T08:32:28Z-
dc.date.available2012-08-08T08:32:28Z-
dc.date.issued2003en_US
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 22, p. 4483-4485-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155235-
dc.description.abstractAn InGaN micro-LED array with a micro-ring geometry was demonstrated. The device has similar electrical characteristics to a conventional BA LED. However, due to its large surface-area to light-emission-area ratio, the extraction efficiency of the structure is enhanced. From the light output measurements, a 100% increase in light emission was recorded over a conventional broad area LED of equivalent emitter area.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleHigh extraction efficiency InGaN micro-ring light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1630352en_US
dc.identifier.scopuseid_2-s2.0-0347477199en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0347477199&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume83en_US
dc.identifier.issue22en_US
dc.identifier.spage4483en_US
dc.identifier.epage4485en_US
dc.identifier.isiWOS:000186787100005-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.scopusauthoridEdwards, PR=7401881875en_US
dc.identifier.scopusauthoridMartin, RW=9742683000en_US
dc.identifier.issnl0003-6951-

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