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Article: The Link between Gallium Vacancies and Plasma Damage to n-Type GaN

TitleThe Link between Gallium Vacancies and Plasma Damage to n-Type GaN
Authors
Issue Date2001
Citation
Physica Status Solidi (A) Applied Research, 2001, v. 188 n. 1, p. 393-397 How to Cite?
AbstractTwo differing trends of plasma damage in n-type GaN have been observed. The two modes of etching characteristics were attributed to the presence of Ga vacancies in the material. The resistivity of GaN with Ga vacancies increases upon plasma exposure through electrical compensation by the formation of deep acceptor states as a result of vacancy-complex formation. GaN samples free of Ga vacancies show a reduction of resistivity as N vacancies are produced through interactions with the plasma. These results correlate well with the photoluminescence spectra, where a significant yellow-band emission was detected from the samples with a high concentration of Ga vacancies.
Persistent Identifierhttp://hdl.handle.net/10722/155234
ISSN
2007 Impact Factor: 1.214
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-08-08T08:32:28Z-
dc.date.available2012-08-08T08:32:28Z-
dc.date.issued2001en_US
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 2001, v. 188 n. 1, p. 393-397en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://hdl.handle.net/10722/155234-
dc.description.abstractTwo differing trends of plasma damage in n-type GaN have been observed. The two modes of etching characteristics were attributed to the presence of Ga vacancies in the material. The resistivity of GaN with Ga vacancies increases upon plasma exposure through electrical compensation by the formation of deep acceptor states as a result of vacancy-complex formation. GaN samples free of Ga vacancies show a reduction of resistivity as N vacancies are produced through interactions with the plasma. These results correlate well with the photoluminescence spectra, where a significant yellow-band emission was detected from the samples with a high concentration of Ga vacancies.en_US
dc.languageengen_US
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_US
dc.titleThe Link between Gallium Vacancies and Plasma Damage to n-Type GaNen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/1521-396X(200111)188:1<393::AID-PSSA393>3.0.CO;2-9en_US
dc.identifier.scopuseid_2-s2.0-0347164742en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0347164742&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume188en_US
dc.identifier.issue1en_US
dc.identifier.spage393en_US
dc.identifier.epage397en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US

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