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Article: Nonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layer

TitleNonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layer
Authors
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1993, v. 63 n. 7, p. 911-913 How to Cite?
AbstractWe have grown an 80-Å-thick strained Si0.50Ge 0.50 layer on n-Si by molecular-beam epitaxy. The strained layer is used to lower the Schottky barrier height for making a nonalloyed shallow ohmic contact to the n-Si. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core-level binding energies of the strained and the relaxed Si0.50Ge0.50 and to determine their relative Fermi-level positions. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W, or Pt as contact metals. In the case of Pt, a 500-Å W diffusion barrier can protect the ohmic behavior up to 550°C for 30 min. The specific contact resistance of the metal/Si0.50Ge0.50/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5×10-5 Ω cm2.
Persistent Identifierhttp://hdl.handle.net/10722/155233
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiou, HKen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorTu, KNen_US
dc.date.accessioned2012-08-08T08:32:28Z-
dc.date.available2012-08-08T08:32:28Z-
dc.date.issued1993en_US
dc.identifier.citationApplied Physics Letters, 1993, v. 63 n. 7, p. 911-913en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155233-
dc.description.abstractWe have grown an 80-Å-thick strained Si0.50Ge 0.50 layer on n-Si by molecular-beam epitaxy. The strained layer is used to lower the Schottky barrier height for making a nonalloyed shallow ohmic contact to the n-Si. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core-level binding energies of the strained and the relaxed Si0.50Ge0.50 and to determine their relative Fermi-level positions. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W, or Pt as contact metals. In the case of Pt, a 500-Å W diffusion barrier can protect the ohmic behavior up to 550°C for 30 min. The specific contact resistance of the metal/Si0.50Ge0.50/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5×10-5 Ω cm2.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleNonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layeren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.109842en_US
dc.identifier.scopuseid_2-s2.0-0347061503en_US
dc.identifier.volume63en_US
dc.identifier.issue7en_US
dc.identifier.spage911en_US
dc.identifier.epage913en_US
dc.identifier.isiWOS:A1993LT20600020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiou, HK=7102330018en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridTu, KN=16198913200en_US

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