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Article: Picosecond photoconductive response of polycrystalline silicon thin films

TitlePicosecond photoconductive response of polycrystalline silicon thin films
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1990, v. 57 n. 1, p. 64-66 How to Cite?
AbstractUsing autocorrelation measurement, we have studied the picosecond photoconductivity of as-deposited, fine-grain polycrystalline silicon thin films. A strong correlation between photoconductive decay time and polycrystalline silicon deposition temperature has been observed. The fastest autocorrelated photoconductive response is 9 ps full width at half maximum, and is obtained from a polycrystalline silicon sample deposited at 590 °C. We estimated the carrier mobility from the peak autocorrelated current, as well as from the average photocurrent of a single gap. These two values show a large difference for samples deposited at relatively high temperatures, which can be explained by imperfect metal-semiconductor ohmic contacts.
Persistent Identifierhttp://hdl.handle.net/10722/155230
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorShu, Cen_US
dc.contributor.authorHu, BBen_US
dc.contributor.authorZhang, XCen_US
dc.contributor.authorMei, Pen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:27Z-
dc.date.available2012-08-08T08:32:27Z-
dc.date.issued1990en_US
dc.identifier.citationApplied Physics Letters, 1990, v. 57 n. 1, p. 64-66en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155230-
dc.description.abstractUsing autocorrelation measurement, we have studied the picosecond photoconductivity of as-deposited, fine-grain polycrystalline silicon thin films. A strong correlation between photoconductive decay time and polycrystalline silicon deposition temperature has been observed. The fastest autocorrelated photoconductive response is 9 ps full width at half maximum, and is obtained from a polycrystalline silicon sample deposited at 590 °C. We estimated the carrier mobility from the peak autocorrelated current, as well as from the average photocurrent of a single gap. These two values show a large difference for samples deposited at relatively high temperatures, which can be explained by imperfect metal-semiconductor ohmic contacts.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titlePicosecond photoconductive response of polycrystalline silicon thin filmsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.103579en_US
dc.identifier.scopuseid_2-s2.0-0345762213en_US
dc.identifier.volume57en_US
dc.identifier.issue1en_US
dc.identifier.spage64en_US
dc.identifier.epage66en_US
dc.identifier.isiWOS:A1990DL68400022-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridShu, C=23023374800en_US
dc.identifier.scopusauthoridHu, BB=24325456000en_US
dc.identifier.scopusauthoridZhang, XC=7410280543en_US
dc.identifier.scopusauthoridMei, P=36876516400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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