File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: MIS-Schottky theory under conditions of optical carrier generation in solar cells

TitleMIS-Schottky theory under conditions of optical carrier generation in solar cells
Authors
Issue Date1976
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1976, v. 29 n. 1, p. 51-53 How to Cite?
AbstractThe theory of MIS-Schottky barriers and their electrical characteristics is examined for its application to solar cells. It is found that the interface behavior of contacts forward-biased by illumination is qualitatively different from that of the same contacts biased in the dark by an applied forward voltage. Observed increases due to the interfacial layer in the open-circuit voltage of the solar cell cannot therefore be associated with increases in the "n value" measured for the dark current, but rather are due to the different effects of this layer on the transport properties of majority and minority carriers. The theory predicts an optimum thickness for the interfacial layer above which the short-circuit (minority-carrier) current decreases, and the efficiency (fill factor) is degraded.
Persistent Identifierhttp://hdl.handle.net/10722/155227
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCard, HCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:26Z-
dc.date.available2012-08-08T08:32:26Z-
dc.date.issued1976en_US
dc.identifier.citationApplied Physics Letters, 1976, v. 29 n. 1, p. 51-53en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155227-
dc.description.abstractThe theory of MIS-Schottky barriers and their electrical characteristics is examined for its application to solar cells. It is found that the interface behavior of contacts forward-biased by illumination is qualitatively different from that of the same contacts biased in the dark by an applied forward voltage. Observed increases due to the interfacial layer in the open-circuit voltage of the solar cell cannot therefore be associated with increases in the "n value" measured for the dark current, but rather are due to the different effects of this layer on the transport properties of majority and minority carriers. The theory predicts an optimum thickness for the interfacial layer above which the short-circuit (minority-carrier) current decreases, and the efficiency (fill factor) is degraded.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleMIS-Schottky theory under conditions of optical carrier generation in solar cellsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.88870en_US
dc.identifier.scopuseid_2-s2.0-0344954301en_US
dc.identifier.volume29en_US
dc.identifier.issue1en_US
dc.identifier.spage51en_US
dc.identifier.epage53en_US
dc.identifier.isiWOS:A1976BU88300022-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats