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Article: Nonuniform electric field effect on phonon-assisted tunneling in semiconductors

TitleNonuniform electric field effect on phonon-assisted tunneling in semiconductors
Authors
Issue Date1975
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcs
Citation
Journal Of Physics And Chemistry Of Solids, 1975, v. 36 n. 11, p. 1255-1259 How to Cite?
AbstractExpressions for the phonon-assisted indirect tunneling probability in the presence of a nonuniform electric field due to two mechanisms are calculated explicitly. The first mechanism is a first order one in which an electron on one band scatters to another band with the emission of a phonon. The other mechanism is a second order process in which an electron in one band tunnels to an intermediate state in a higher band via the interband term in the Hamiltonian and then scatters to another band with the emission of a phonon. It is shown that the electric field nonuniformity enhances the indirect tunneling probability. © 1975.
Persistent Identifierhttp://hdl.handle.net/10722/155223
ISSN
2015 Impact Factor: 2.048
2015 SCImago Journal Rankings: 0.639

 

DC FieldValueLanguage
dc.contributor.authorYang, Een_US
dc.date.accessioned2012-08-08T08:32:26Z-
dc.date.available2012-08-08T08:32:26Z-
dc.date.issued1975en_US
dc.identifier.citationJournal Of Physics And Chemistry Of Solids, 1975, v. 36 n. 11, p. 1255-1259en_US
dc.identifier.issn0022-3697en_US
dc.identifier.urihttp://hdl.handle.net/10722/155223-
dc.description.abstractExpressions for the phonon-assisted indirect tunneling probability in the presence of a nonuniform electric field due to two mechanisms are calculated explicitly. The first mechanism is a first order one in which an electron on one band scatters to another band with the emission of a phonon. The other mechanism is a second order process in which an electron in one band tunnels to an intermediate state in a higher band via the interband term in the Hamiltonian and then scatters to another band with the emission of a phonon. It is shown that the electric field nonuniformity enhances the indirect tunneling probability. © 1975.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcsen_US
dc.relation.ispartofJournal of Physics and Chemistry of Solidsen_US
dc.titleNonuniform electric field effect on phonon-assisted tunneling in semiconductorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, E:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, E=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0242296545en_US
dc.identifier.volume36en_US
dc.identifier.issue11en_US
dc.identifier.spage1255en_US
dc.identifier.epage1259en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, E=7202021229en_US

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