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Article: Fabrication of matrix-addressable InGaN-based microdisplays of high array density

TitleFabrication of matrix-addressable InGaN-based microdisplays of high array density
Authors
KeywordsGan
Microdisplays
Microlight-Emitting Diodes (Micro-Leds)
Issue Date2003
Citation
Ieee Photonics Technology Letters, 2003, v. 15 n. 11, p. 1516-1518 How to Cite?
AbstractWe describe the fabrication and characterization of matrix-addressable microlight-emitting diode (micro-LED) arrays based on InGaN, having elemental diameter of 20 μm and array size of up to 128 × 96 elements. The introduction of a planar topology prior to contact metallization is an important processing step in advancing the performance of these devices. Planarization is achieved by chemical-mechanical polishing of the SiO2-deposited surface. In this way, the need for a single contact pad for each individual element can be eliminated. The resulting significant simplification in the addressing of the pixels opens the way to scaling to devices with large numbers of elements. Compared to conventional broad-area LEDs, the micrometer-scale devices exhibit superior light output and current handling capabilities, making them excellent candidates for a range of uses including high efficiency and robust microdisplays.
Persistent Identifierhttp://hdl.handle.net/10722/155222
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJeon, CWen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorDawson, MDen_US
dc.date.accessioned2012-08-08T08:32:25Z-
dc.date.available2012-08-08T08:32:25Z-
dc.date.issued2003en_US
dc.identifier.citationIeee Photonics Technology Letters, 2003, v. 15 n. 11, p. 1516-1518en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://hdl.handle.net/10722/155222-
dc.description.abstractWe describe the fabrication and characterization of matrix-addressable microlight-emitting diode (micro-LED) arrays based on InGaN, having elemental diameter of 20 μm and array size of up to 128 × 96 elements. The introduction of a planar topology prior to contact metallization is an important processing step in advancing the performance of these devices. Planarization is achieved by chemical-mechanical polishing of the SiO2-deposited surface. In this way, the need for a single contact pad for each individual element can be eliminated. The resulting significant simplification in the addressing of the pixels opens the way to scaling to devices with large numbers of elements. Compared to conventional broad-area LEDs, the micrometer-scale devices exhibit superior light output and current handling capabilities, making them excellent candidates for a range of uses including high efficiency and robust microdisplays.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Photonics Technology Lettersen_US
dc.subjectGanen_US
dc.subjectMicrodisplaysen_US
dc.subjectMicrolight-Emitting Diodes (Micro-Leds)en_US
dc.titleFabrication of matrix-addressable InGaN-based microdisplays of high array densityen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/LPT.2003.818643en_US
dc.identifier.scopuseid_2-s2.0-0242270865en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242270865&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume15en_US
dc.identifier.issue11en_US
dc.identifier.spage1516en_US
dc.identifier.epage1518en_US
dc.identifier.isiWOS:000186113900008-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US

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